Maria Sultana Rupa, M.Tanseer Ali, Mohammad Abdul Mannan, Mehedi Hasan
{"title":"Modeling and performance analysis of a transparent multilayer solar cell","authors":"Maria Sultana Rupa, M.Tanseer Ali, Mohammad Abdul Mannan, Mehedi Hasan","doi":"10.53799/ajse.v22i3.580","DOIUrl":null,"url":null,"abstract":"The work that has been presented here aims to simulate a multijunction transparent solar cell and analyze its performance in terms of simulated short-circuit current density, open circuit voltage, efficiency, and fill factor. The model structure is created by COMSOL Multiphysics and consists of five layers of InAs/InSb/AlGaAs/GaN/Si, taking into account the source materials' properties. Its electromagnetic wave is used to report on the optical and electrical properties. It is assumed that the cell is working at room temperature (300K). A maximum conversion of 15.2655% would be achieved for this model's simulation exposures at fill factor (FF)=0.6531 from the I-V curve and for such a combination and transparency.","PeriodicalId":224436,"journal":{"name":"AIUB Journal of Science and Engineering (AJSE)","volume":"236 4","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"AIUB Journal of Science and Engineering (AJSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.53799/ajse.v22i3.580","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The work that has been presented here aims to simulate a multijunction transparent solar cell and analyze its performance in terms of simulated short-circuit current density, open circuit voltage, efficiency, and fill factor. The model structure is created by COMSOL Multiphysics and consists of five layers of InAs/InSb/AlGaAs/GaN/Si, taking into account the source materials' properties. Its electromagnetic wave is used to report on the optical and electrical properties. It is assumed that the cell is working at room temperature (300K). A maximum conversion of 15.2655% would be achieved for this model's simulation exposures at fill factor (FF)=0.6531 from the I-V curve and for such a combination and transparency.