Unravelling the doping mechanism and origin of carrier limitation in Ti-doped In2O3 films

IF 2.7 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Applied Physics Pub Date : 2024-01-02 DOI:10.1063/5.0175864

Ann-Katrin Emmerich, Kim Alexander Creutz, Yaw-Yeu Cheng, Jean-Christophe Jaud, Andreas Hubmann, Andreas Klein

引用次数: 0

Abstract

Ti-doped In2O3 thin films with varying Ti contents are prepared by partial reactive co-sputtering using ceramic In2O3 and metallic Ti targets and characterized by in situ x-ray photoelectron spectroscopy, electrical conductivity, and Hall-effect measurements. For a substrate temperature of 400°C, the carrier concentration increases faster than the Ti content and saturates at ≈7.4×1020cm−3. Based on these results, it is suggested that Ti does not directly act as donor in In2O3 but is rather forming TiO2 precipitates and that the related scavenging of oxygen generates oxygen vacancies in In2O3 as origin of doping. Neutralization of oxygen vacancies is, therefore, suggested to be origin of the limitation of the carrier concentration in Ti-doped In2O3 films.

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揭示掺钛 In2O3 薄膜中载流子限制的掺杂机制和起源

利用陶瓷 In2O3 和金属 Ti 靶材，通过部分反应共溅射法制备了不同 Ti 含量的掺 Ti-In2O3 薄膜，并通过原位 X 射线光电子能谱、电导率和霍尔效应测量对其进行了表征。在基底温度为 400°C 时，载流子浓度的增加速度快于钛含量的增加速度，并在≈7.4×1020cm-3 时达到饱和。基于这些结果，我们认为钛在 In2O3 中并不直接充当供体，而是形成了 TiO2 沉淀，而相关的氧清除作用在 In2O3 中产生了氧空位，这是掺杂的起源。因此，氧空位的中和被认为是限制掺杂钛的 In2O3 薄膜中载流子浓度的原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Applied Physics 物理-物理：应用

CiteScore

5.40

自引率

9.40%

发文量

1534

审稿时长

2.3 months

期刊介绍： The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces