Raman scattering monitoring of thin film materials for atomic layer etching/deposition in the nano-semiconductor process integration

IF 6.1 Q2 CHEMISTRY, PHYSICAL
Jae Bin Kim, Dae Sik Kim, Jin Seok Kim, Jin Hyun Choe, Da Won Ahn, Eun Su Jung, Sung Gyu Pyo
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Abstract

According to Moore's law, the semiconductor industry is experiencing certain challenges in terms of adapting to highly sophisticated integrated technology. Therefore, controlling materials at the atomic scale is considered a mandatory requirement for further development. To this end, atomic layer deposition and etching skills are being increasingly researched as potential solutions. However, several considerations exist for adopting atomic technology with respect to surface analysis. This review primarily focuses on the use of Raman scattering for evaluating atomic-layered materials. Raman scattering analysis is expected to gradually expand as a semiconductor process and mass-production monitoring technology. As this can enhance the applications of this method, our review can form the basis for establishing Raman scattering analysis as a new trend for atomic-scale monitoring.
纳米半导体工艺集成中原子层蚀刻/沉积薄膜材料的拉曼散射监测
根据摩尔定律,半导体行业在适应高精尖集成技术方面正面临着一定的挑战。因此,在原子尺度上控制材料被认为是进一步发展的必然要求。为此,原子层沉积和蚀刻技术作为潜在的解决方案正得到越来越多的研究。不过,在表面分析方面采用原子技术还需要考虑几个因素。本综述主要侧重于使用拉曼散射评估原子层材料。拉曼散射分析作为一种半导体工艺和大规模生产监控技术,预计将逐步扩大。因此,我们的综述可为将拉曼散射分析确立为原子尺度监测的新趋势奠定基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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