The Effect of Grain Size on the Structure and Phase Composition of VТ1-0 Alloy Implanted with Aluminum Ions

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, APPLIED
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引用次数: 0

Abstract

The structural and phase state of the surface layers of technically pure titanium (VT1-0 alloy) implanted with aluminum ions in three states (submicrocrystalline, ultrafine-grained, and fine-grained) obtained by multiple uniaxial pressing (abc pressing) followed by multipass rolling in groove rolls at room temperature and subsequent annealing at 573, 673, and 773 K for 1 h, respectively, has been studied by transmission electron microscopy and energy dispersive X-ray spectroscopy on foils cut perpendicular to the machined sample surface. Ion implantation has been performed for 8 h and 20 min at an irradiation dose of 10 × 1017 ions/cm2 and a temperature of 623 K. It has been found that the implantation led to the formation of a gradient structure consisting of five layers. For each layer, the thickness, phase composition, and shape and arrangement of second-phase particles have been determined and the α-Ti grain size and the size, distribution density, and volume fractions of separated particles have been measured. It has been established that the implantation causes the formation of Ti3Al and TiAl3 intermetallic phases. Ti3Al particles have a lamellar shape and are located inside parts of α-Ti grains, while TiAl3 particles have a rounded shape and are arranged randomly.

晶粒尺寸对植入铝离子的 VТ1-0 合金的结构和相组成的影响
摘要 通过透射电子显微镜和能量色散 X 射线光谱,研究了技术纯钛(VT1-0 合金)表面层的结构和相态,这些表面层在三种状态(亚微晶、超细晶粒和细晶粒)下植入了铝离子,这些铝离子是通过多次单轴压制(abc 压制)获得的,然后在室温下在槽辊中进行多道轧制,随后分别在 573、673 和 773 K 下退火 1 小时、673 和 773 K 下退火 1 小时的透射电子显微镜和能量色散 X 射线光谱仪对垂直于加工样品表面切割的箔片进行了研究。离子注入时间为 8 小时 20 分钟,辐照剂量为 10 × 1017 离子/平方厘米,温度为 623 K。测定了每一层的厚度、相组成、第二相颗粒的形状和排列,并测量了α-钛晶粒大小以及分离颗粒的大小、分布密度和体积分数。已确定植入会导致 Ti3Al 和 TiAl3 金属间相的形成。Ti3Al 颗粒呈片状,位于 α-Ti 晶粒的内部,而 TiAl3 颗粒呈圆形,随机排列。
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来源期刊
Technical Physics Letters
Technical Physics Letters 物理-物理:应用
CiteScore
1.50
自引率
0.00%
发文量
44
审稿时长
2-4 weeks
期刊介绍: Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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