Arwa Albar, Anjana E Sudheer, D Murali, S Assa Aravindh
{"title":"Electronic properties of two dimensional PtSSe/SrTiO3 Janus Van der Waals heterostructures","authors":"Arwa Albar, Anjana E Sudheer, D Murali, S Assa Aravindh","doi":"10.1088/2516-1075/ad0d82","DOIUrl":null,"url":null,"abstract":"The structural stability and electronic properties of two dimensional PtSSe/SrTiO<sub>3</sub> Janus heterostructures were investigated using density functional theory calculations, considering both S and Se terminations into account. <italic toggle=\"yes\">Ab-initio</italic> thermodynamics simulations revealed that the heterostructure formed with Se/Ti interface termination is more stable with an energy difference of 1.53 eV than the S/Ti termination. In contrast to the semiconducting nature of the free standing monolayers, electronic structure analysis revealed metallic behavior for the PtSSe/SrTiO<sub>3</sub> heterostructures. Possible charge transfer scenario is envisaged from SrTiO<sub>3</sub> to PtSSe, and type III (broken gap) band alignment is obtained for the heterostructure which is desirable for tunneling applications. The favorable energetic stability of these heterostructures indicate the possibility of realizing them in real-time experimental fabrication, and PtSSe/SrTiO<sub>3</sub> heterostructures can be promising for energy-efficient future-generation electronics.","PeriodicalId":42419,"journal":{"name":"Electronic Structure","volume":"os-24 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2023-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Structure","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2516-1075/ad0d82","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The structural stability and electronic properties of two dimensional PtSSe/SrTiO3 Janus heterostructures were investigated using density functional theory calculations, considering both S and Se terminations into account. Ab-initio thermodynamics simulations revealed that the heterostructure formed with Se/Ti interface termination is more stable with an energy difference of 1.53 eV than the S/Ti termination. In contrast to the semiconducting nature of the free standing monolayers, electronic structure analysis revealed metallic behavior for the PtSSe/SrTiO3 heterostructures. Possible charge transfer scenario is envisaged from SrTiO3 to PtSSe, and type III (broken gap) band alignment is obtained for the heterostructure which is desirable for tunneling applications. The favorable energetic stability of these heterostructures indicate the possibility of realizing them in real-time experimental fabrication, and PtSSe/SrTiO3 heterostructures can be promising for energy-efficient future-generation electronics.
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