{"title":"Coupled Thermal Solidification Process Simulation of Sapphire Growth","authors":"","doi":"10.1007/s40192-023-00321-7","DOIUrl":null,"url":null,"abstract":"<h3>Abstract</h3> <p>Thermal distribution during the sapphire growth process determines to a great extent the thermal stresses and dislocation density in sapphire. In this work, thermal and defect simulations of sapphire growth in a simplified single-boule furnace are presented. The heat transfer in the furnace is modeled via ANSYS Fluent® by considering conduction, convection and radiation effects. A dislocation density-based crystal plasticity model is applied for the numerical simulation of dislocation evolution during the crystal growth of sapphire. The physical models are validated by using a temporal series of measurements in the real furnace geometry, which capture the crystal–melt interface position during the technological growth process. The growth rate and the shape of the crystal growth front are analyzed for different side and top heater powers which result in different thermal distributions in the furnace. It is found that the cooling flux at the crucible bottom wall determines to a great extent the growth profile in the first half of the growth stage. Only toward the end of the growth stage, different top and side power distributions induce different growth front shapes. The effect of the convexity of the growth surface on the generation of dislocation defects is investigated by the crystal plasticity model. The results of simulations show that the convexity of the growth surface has a significant effect on the generation of dislocations.</p>","PeriodicalId":13604,"journal":{"name":"Integrating Materials and Manufacturing Innovation","volume":null,"pages":null},"PeriodicalIF":2.4000,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrating Materials and Manufacturing Innovation","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s40192-023-00321-7","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, MANUFACTURING","Score":null,"Total":0}
引用次数: 0
Abstract
Thermal distribution during the sapphire growth process determines to a great extent the thermal stresses and dislocation density in sapphire. In this work, thermal and defect simulations of sapphire growth in a simplified single-boule furnace are presented. The heat transfer in the furnace is modeled via ANSYS Fluent® by considering conduction, convection and radiation effects. A dislocation density-based crystal plasticity model is applied for the numerical simulation of dislocation evolution during the crystal growth of sapphire. The physical models are validated by using a temporal series of measurements in the real furnace geometry, which capture the crystal–melt interface position during the technological growth process. The growth rate and the shape of the crystal growth front are analyzed for different side and top heater powers which result in different thermal distributions in the furnace. It is found that the cooling flux at the crucible bottom wall determines to a great extent the growth profile in the first half of the growth stage. Only toward the end of the growth stage, different top and side power distributions induce different growth front shapes. The effect of the convexity of the growth surface on the generation of dislocation defects is investigated by the crystal plasticity model. The results of simulations show that the convexity of the growth surface has a significant effect on the generation of dislocations.
期刊介绍：
The journal will publish: Research that supports building a model-based definition of materials and processes that is compatible with model-based engineering design processes and multidisciplinary design optimization; Descriptions of novel experimental or computational tools or data analysis techniques, and their application, that are to be used for ICME; Best practices in verification and validation of computational tools, sensitivity analysis, uncertainty quantification, and data management, as well as standards and protocols for software integration and exchange of data; In-depth descriptions of data, databases, and database tools; Detailed case studies on efforts, and their impact, that integrate experiment and computation to solve an enduring engineering problem in materials and manufacturing.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
