Design and optimization of a conical electrostatic objective lens of a low-voltage scanning electron microscope for surface imaging and analysis in ultra-high-vacuum environment

IF 2.1 3区 工程技术 Q2 MICROSCOPY
Jeong-Woong Lee , In-Yong Park , Takashi Ogawa
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引用次数: 0

Abstract

Low-voltage scanning electron microscopy (LV-SEM) with landing energies below 5 keV has been widely used due to its advantages in mitigating the damage and charging effects to a specimen and enhancing surface information due to small interaction volume of electrons inside a specimen. Additionally, for elemental analysis of the surfaces of bulk specimens with Auger electron spectroscopy (AES) or electron energy loss spectroscopy (EELS), ultra-high-vacuum (UHV) environment is essential to maintain clean surfaces without the absorption of gas molecules during the electron beam irradiation for the acquisition of spectral data. In this study, we propose the optimal design and condition of a conical Electrostatic Objective Lens (EOL) for a UHV LV-SEM to achieve the high spatial resolution and secondary electron (SE) detection efficiency. The EOL is composed of only the three electrodes (retarding, focusing and booster electrodes) and the insulators, which is suitable for maintaining a UHV environment with less out-gassing. The cone angle of the EOL is determined as 60° to integrate a spectrometer in the UHV LV-SEM and in a large size and a higher tilt angle of the sample. Through the optimization with the simulations, the EOL achieves the minimized spherical and chromatic aberration coefficients of 0.05 and 0.03 mm at the sample side, respectively, at the landing energy of 50 eV and the shortest working distance (WD) of 1 mm for high-resolution imaging. In addition, the probe diameter of the optimized EOL is 2.3 nm at 1 keV and 5.7 nm at 50 eV with a WD of 1 mm and a probe current of 10 pA, which are comparable to previously studied compound objective lenses with magnetic and electrostatic lenses. Using a longer WD of 4 mm for analysis, the probe diameter was 5.4 nm at 1 keV and the SE detection efficiency was 83.3 % owing to the separated scintillator detector structure from the booster electrode.

These results imply that the optimized EOL has the potential to be applied to a high-performance UHV LV-SEM for the surface imaging and analysis with a simple system configuration.

用于超高真空环境下表面成像和分析的低压扫描电子显微镜锥形静电物镜的设计与优化
着陆能量低于5kev的低压扫描电子显微镜(LV-SEM)由于其在减轻对样品的损伤和充电效应以及样品内部电子相互作用体积小而增强表面信息等方面的优势而得到广泛应用。此外,对于使用俄歇电子能谱(AES)或电子能量损失能谱(EELS)对块状试样表面进行元素分析,在电子束照射获取光谱数据时,超高真空(UHV)环境对于保持表面清洁而不吸收气体分子是必不可少的。本研究提出了用于特高压LV-SEM的锥形静电物镜(EOL)的优化设计和条件,以实现高空间分辨率和二次电子(SE)检测效率。EOL仅由三个电极(缓速电极、聚焦电极和升压电极)和绝缘子组成,适用于维持特高压环境,排气较少。EOL的锥角为60度,用于在特高压LV-SEM中集成光谱仪,样品尺寸大,倾斜角度高。通过仿真优化,在着陆能量为50 eV时,EOL在样品侧的球差系数和色差系数分别为0.05和0.03 mm,在高分辨率成像时的最短工作距离(WD)为1 mm。此外,优化后的EOL在1 keV时探头直径为2.3 nm,在50 eV时探头直径为5.7 nm, WD为1 mm,探头电流为10 pA,与已有的磁性和静电透镜复合物镜相当。在1 keV下,探针直径为5.4 nm,采用与升压电极分离的闪烁体探测器结构,探测效率为83.3%。这些结果表明,优化后的EOL具有应用于高性能特高压LV-SEM表面成像和分析的潜力,系统配置简单。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Ultramicroscopy
Ultramicroscopy 工程技术-显微镜技术
CiteScore
4.60
自引率
13.60%
发文量
117
审稿时长
5.3 months
期刊介绍: Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.
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