Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
M. S. Afanasyev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva
{"title":"Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures","authors":"M. S. Afanasyev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva","doi":"10.1134/s1064226923100017","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Hafnium oxide (HfO<sub>2</sub>) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO<sub>2</sub> films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO<sub>2</sub>–Si) based on them are presented.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":"84 1","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Communications Technology and Electronics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1134/s1064226923100017","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Hafnium oxide (HfO2) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO2 films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO2–Si) based on them are presented.

Abstract Image

氧化铪薄膜的形成条件对异质结构的结构和电物理特性的影响
摘要:采用磁控溅射技术在硅衬底上制备了氧化铪薄膜。研究了HfO2薄膜的结构组成和基于它们的金属-绝缘体-半导体异质结构(Ni - HfO2 - si)的电学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信