Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures

IF 0.4 4区计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Communications Technology and Electronics Pub Date : 2023-12-13 DOI:10.1134/s1064226923100017

M. S. Afanasyev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva

引用次数: 0

Abstract

Hafnium oxide (HfO₂) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO₂ films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO₂–Si) based on them are presented.

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氧化铪薄膜的形成条件对异质结构的结构和电物理特性的影响

摘要:采用磁控溅射技术在硅衬底上制备了氧化铪薄膜。研究了HfO2薄膜的结构组成和基于它们的金属-绝缘体-半导体异质结构(Ni - HfO2 - si)的电学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Communications Technology and Electronics 工程技术-电信学

CiteScore

1.00

自引率

20.00%

发文量

170

审稿时长

10.5 months

期刊介绍： Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.

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