Spin Magnetoresistance of Thin-Film Structures Made of Manganite and Material with Strong Spin-Orbital Interaction

IF 0.4 4区计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Communications Technology and Electronics Pub Date : 2023-12-13 DOI:10.1134/s1064226923100194

G. D. Ulev, K. Y. Constantinian, I. E. Moskal’, G. A. Ovsyannikov, A. V. Shadrin

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Abstract

Abstract—

The paper presents the results of experimental determination of the spin Hall angle in a Pt/La_0.7Sr_0.3MnO₃ bilayer metal/ferromagnetic structure inferred from angular dependences of longitudinal and transverse spin magnetoresistance in configuration of the planar Hall effect. The value of the spin Hall angle determined from the longitudinal magnetoresistance is θ_Hx ≈ 0.016, and that from the transverse magnetoresistance is θ_Hy ≈ 0.018, whereas for SrIrO₃/La_0.7Sr_0.3MnO₃ heterostructures the ratio of values of the transverse spin Hall angle to the longitudinal one appears to be substantially higher, θ_Hy/θ_Hx ≈ 9, which is apparently caused by a layer with a high spin conductance formed at the SrIrO₃/La_0.7Sr_0.3MnO₃ interface.

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锰矿和强自旋轨道相互作用材料薄膜结构的自旋磁阻

摘要:本文从平面霍尔效应构型中纵向和横向自旋磁电阻的角度依赖关系出发，给出了Pt/La0.7Sr0.3MnO3双层金属/铁磁结构中自旋霍尔角的实验测定结果。自旋霍尔角的值决定从纵向磁阻θHx≈0.016,从横向磁阻,θHy≈0.018,而对于SrIrO3 / La0.7Sr0.3MnO3异质结构的比例值纵向横向旋转厅角的一个似乎更高,θHy /θHx≈9,这显然是由一层具有高自旋电导形成SrIrO3 / La0.7Sr0.3MnO3接口。

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来源期刊

Journal of Communications Technology and Electronics 工程技术-电信学

CiteScore

1.00

自引率

20.00%

发文量

170

审稿时长

10.5 months

期刊介绍： Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.