P.M. Lytvyn, V. Dzhagan, M. Valakh, A.A. Korchovyi, O.F. Isaieva, O.A. Stadnik, O. Kulbachynskyi, O.Yo. Gudymenko, B. Romanyuk, V.P. Melnik
{"title":"Nanomechanical properties of polycrystalline vanadium oxide thin films of different phase composition","authors":"P.M. Lytvyn, V. Dzhagan, M. Valakh, A.A. Korchovyi, O.F. Isaieva, O.A. Stadnik, O. Kulbachynskyi, O.Yo. Gudymenko, B. Romanyuk, V.P. Melnik","doi":"10.15407/spqeo26.04.388","DOIUrl":null,"url":null,"abstract":"Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and structure. This work uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray diffractometry and Raman spectroscopy structural analysis to investigate the intricate connections between VO x post-annealing, phase composition, and resulting nanoscale mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter, indentation is performed on VO x films with systematic variations in structure – from mixed insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property variations are observed between compositions, with order-of-magnitude increases in hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion implantation further enhances nanomechanical performance through targeted defect engineering. Correlating indentation-derived trends with detailed structural and morphological characterization elucidates explicit structure-property relationships inaccessible by other techniques. The approach provides critical mechanics-driven insights into links between VO x synthesis, structure evolution, and property development. Broader implementation will accelerate processing optimization for electronics and advanced fundamental understanding of nanoscale structure-functionality relationships","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"53 4","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.04.388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and structure. This work uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray diffractometry and Raman spectroscopy structural analysis to investigate the intricate connections between VO x post-annealing, phase composition, and resulting nanoscale mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter, indentation is performed on VO x films with systematic variations in structure – from mixed insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property variations are observed between compositions, with order-of-magnitude increases in hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion implantation further enhances nanomechanical performance through targeted defect engineering. Correlating indentation-derived trends with detailed structural and morphological characterization elucidates explicit structure-property relationships inaccessible by other techniques. The approach provides critical mechanics-driven insights into links between VO x synthesis, structure evolution, and property development. Broader implementation will accelerate processing optimization for electronics and advanced fundamental understanding of nanoscale structure-functionality relationships