The Optical Properties Characterization of Hydrogenated Silicon by Spectroscopic Ellipsometry for Solar Cell Applications

Q4 Multidisciplinary
Araya Mungchamnankit, P. Limnonthakul
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引用次数: 0

Abstract

Amorphous and microcrystalline silicon play a critical role as layers in solar cell design, specifically in the absorption process layer which is crucial for the efficiency of sunlight conversion. This study explores the creation of hydrogenated amorphous silicon films (a-Si:H) via very high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) and analyzes their optical properties and crystal structure. We determine the optical band gap of amorphous silicon using a Tauc plot and Spectroscopic Ellipsometry (SE) analysis of transmittance results. By comparing the data, we gain insights into the material's optical properties, aiding our understanding of the findings and enabling a swift evaluation of its optical band gap. Furthermore, we characterize the film's crystal structure using grazing X-ray diffraction. Our results reveal that a-Si:H on glass, produced by VHF-PECVD at a substrate temperature of 200°C with various hydrogen dilutions (RH=H2/SiH4) ranging from 1.0 to 5.0, remains in the amorphous phase. The SE modeling provides the optical band gap of the a-Si:H film, with the lowest and highest optical band gap values occurring at RH 1.0 (1.79 eV) and RH 3.0 (1.84 eV), respectively. We employed the Tauc-Lorentz model with five fitting parameters to extract optical properties and the band gap of amorphous silicon, including the real part of the dielectric function. This model incorporates three layers: the interface layer between the glass substrate and a-Si:H, the a-Si:H film, and surface roughness, yielding the most accurate model. This comprehensive analysis unveils the exact optical properties of the fabricated films, offering valuable insights for solar cell design and manufacturing. This research confirms that Spectroscopic Ellipsometry, a rapid and non-destructive method for measuring the optical band gap, can significantly benefit the solar cell fabrication industry.
利用光谱椭偏仪表征太阳能电池应用中氢化硅的光学特性
非晶硅和微晶硅在太阳能电池设计中起着至关重要的作用,特别是在吸收层中,吸收层对太阳能转换效率至关重要。本研究探索了通过甚高频等离子体增强化学气相沉积(VHF-PECVD)制备氢化非晶硅薄膜(a-Si:H),并分析了其光学特性和晶体结构。我们利用Tauc图和透射率光谱椭偏(SE)分析确定了非晶硅的光学带隙。通过比较数据,我们深入了解了材料的光学特性,帮助我们理解研究结果,并能够快速评估其光学带隙。此外,我们用掠射x射线衍射表征了薄膜的晶体结构。结果表明,在衬底温度为200℃、不同氢稀释度(RH=H2/SiH4)为1.0 ~ 5.0的条件下,VHF-PECVD制得的a- si:H在玻璃上仍保持在非晶相中。SE模型给出了a-Si:H薄膜的光学带隙,最低和最高的光学带隙值分别出现在RH 1.0 (1.79 eV)和RH 3.0 (1.84 eV)。我们采用陶克-洛伦兹模型与五个拟合参数提取非晶硅的光学性质和带隙,包括介电函数的实部。该模型包含三层:玻璃基板和a-Si:H之间的界面层,a-Si:H薄膜和表面粗糙度,产生最精确的模型。这项全面的分析揭示了制造薄膜的确切光学特性,为太阳能电池的设计和制造提供了有价值的见解。该研究证实,光谱椭偏法作为一种快速、无损的测量光学带隙的方法,对太阳能电池制造行业具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Current Science and Technology
Journal of Current Science and Technology Multidisciplinary-Multidisciplinary
CiteScore
0.80
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