3D characterization of abnormal grain growth in nanocrystalline nickel

Wanquan Zhu, Xiaobing Huang, Wei Cai, Tianlin Huang, Guilin Wu, Xiaoxu Huang
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Abstract

Abnormal grain growth, a pervasive phenomenon witnessed during the annealing of nanocrystalline metals, precipitates a swift diminution of the distinctive properties inherent to such materials. Historically, conventional transmission electron microscopy has struggled to efficiently procure comprehensive five-parameter crystallographic information from a substantial number of grain boundaries in nanocrystalline metals, thus inhibiting a deeper understanding of abnormal grain growth behavior within nanocrystalline materials. In this study, we utilize a high-throughput characterization method—three-dimensional orientation mapping in the TEM (3D-OMiTEM) to characterize the crystallographic five-parameter character of grain boundaries with an area of over 3.4 × 106 nm2 in an abnormally grown nanocrystalline nickel sample. When coupled with existing theoretical simulation results, it is discerned that the grain boundary population shows a relatively large scatter when it is correlated to the calculated grain boundary energy; the grain boundaries of abnormally grown grains exhibit lower grain boundary energy compared to those that have not undergone abnormal growth. Merging high-throughput grain boundary information obtained from three-dimensional orientation mapping data with grain boundary properties derived from high-throughput theoretical calculations following the concept of materials genome engineering will undoubtedly facilitate further advancements in comprehending and discerning the interfacial behaviors of crystalline materials.

Abstract Image

纳米晶镍异常晶粒生长的三维表征
异常晶粒生长是纳米晶金属退火过程中普遍存在的现象,它会导致材料固有特性的迅速衰减。从历史上看,传统的透射电子显微镜一直在努力从纳米晶金属的大量晶界中有效地获取全面的五参数晶体学信息,从而抑制了对纳米晶材料中异常晶粒生长行为的更深入理解。在这项研究中,我们利用高通量表征方法- TEM中的三维取向映射(3D - OMiTEM)来表征异常生长的纳米晶镍样品中面积超过3.4 × 106 nm2的晶界的晶体学五参数特征。结合已有的理论模拟结果,发现晶界种群与计算晶界能相关时,呈现出较大的散点;异常生长晶粒的晶界能比未异常生长晶粒的晶界能低。根据材料基因组工程的概念,将从三维取向测绘数据中获得的高通量晶界信息与从高通量理论计算中得出的晶界特性相结合,无疑将有助于进一步理解和识别晶体材料的界面行为。
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