Effect of periodically varying chirped AlxInyGa(1-x-y)N/ Al0.70Ga0.30N Super-Lattice based electron blocking region for nearly droop free UV-C LEDs

Materials Science and Engineering: B Pub Date : 2023-11-25 DOI:10.1016/j.mseb.2023.117048

Indrani Mazumder, Kashish Sapra, Ashok Chauhan, Manish Mathew, Kuldip Singh

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Abstract

A SLs quaternary nitride alloy-based UV-C LED with a uniquely designed electron blocking region is proposed in this article. At 200 A/cm² current density, the proposed design has maximum IQE, ∼121% better than the reference design. Additionally, less than 1% efficiency droop is observed in the proposed design. Due to strain compensation offered by the periodically varying and chirped SLs Al_aIn_bGa_(1-a-b)N/ Al_cIn_dGa_(1-c-d)N/ Al_eIn_fGa_(1-e-f)N/ Al_gIn_hGa_(1-g-h)N/ Al_iIn_jGa_(1-i-j)N/ Al_0.70Ga_0.30N electron blocking region, there is no abrupt potential barrier present, which makes it possible for hole injection in the active region to increase and hence improve the LED performance. The substantial improvement in the IQE is attributable to the proposed structure's enhancement in the carrier wave function overlap by 30%.

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周期变化啁啾AlxInyGa(1-x-y)N/ Al0.70Ga0.30N超晶格电子阻挡区对近无下垂UV-C led的影响

本文提出了一种具有独特设计的电子阻挡区的基于SLs季氮化合金的UV-C LED。在200 A/cm2电流密度下，该设计具有最大IQE，比参考设计好约121%。此外，在所提出的设计中，观察到的效率下降小于1%。由于周期性变化和啁啾的SLs AlaInbGa(1-a-b)N/ AlcIndGa(1-c-d)N/ AleInfGa(1-e-f)N/ alginghga (1-g-h)N/ AliInjGa(1-i-j)N/ Al0.70Ga0.30N电子阻挡区提供应变补偿，因此不存在突然势垒，这使得有源区空穴注入增加从而提高LED性能成为可能。IQE的大幅改善归功于所提出的结构将载波函数重叠提高了30%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Materials Science and Engineering: B

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