Controlled Optical Contrast Caused by Reversible Laser-Induced Phase Transitions in GeTe and Ge2Sb2Te5 Thin Films in the Spectral Range from 500 to 20,000 nm

Pub Date : 2023-11-23 DOI:10.1007/s10946-023-10180-4
Anton A. Burtsev, Alexey V. Kiselev, Vitaly V. Ionin, Nikolay N. Eliseev, Mariya E. Fedyanina, Vladimir A. Mikhalevsky, Alexey A. Nevzorov, Oleg A. Novodvorsky, Andrey A. Lotin
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Abstract

In this paper, we present the results of an experimental study of the controlled contrast of optical properties of Germanium Telluride (GeTe) and Germanium Antimony Telluride (Ge2Sb2Te5 or GST) 100 nm thin films, caused by laser-initiated reversible phase transitions from the amorphous-tocrystalline state, and vice versa. We demonstrate a high contrast in the transmissivity and reflectivity spectra in the wide wavelength range from 500 to 20,000 nm. We show that such a contrast of optical properties can be controlled in the set–reset mode, when samples of thin films are exposed to a nanosecond laser pulse at a wavelength of 532 nm, with a spatial distribution close to “top hat.” We confirm the laser-initiated changes in the thin film structures by X-ray diffraction analysis methods.

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光谱范围为500 ~ 20,000 nm的GeTe和Ge2Sb2Te5薄膜的可逆激光诱导相变控制光学对比度
在本文中,我们提出了一项实验研究的结果,对100 nm碲化锗(GeTe)和碲化锗锑(Ge2Sb2Te5或GST)薄膜的光学性质进行了控制对比,这是由激光引发的从无定形到晶态的可逆相变引起的,反之则相反。我们证明了在500到20,000 nm的宽波长范围内,透射率和反射率光谱的高对比度。我们表明,当薄膜样品暴露在波长为532 nm的纳秒激光脉冲下,其空间分布接近“顶帽”时,这种光学性质的对比可以在set-reset模式下进行控制。我们用x射线衍射分析方法证实了激光引起的薄膜结构变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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