Electromagnetic Waves in a Tangentially Magnetized One-Side Metallized Bigyrotropic Layer (Example of Calculating the Spin Wave Characteristics)

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
E. H. Lock, S. V. Gerus
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引用次数: 0

Abstract

The problem of arbitrary propagation of electromagnetic waves in a tangentially magnetized one-side metallized bigyrotropic layer is solved without using the magnetostatic approximation. It is shown that, in this problem, Maxwell’s equations are reduced to a differential equation corresponding to a biquadratic characteristic equation with four roots kx21, ‒kx21, kx22, and –kx22 describing the distribution of the wave in the layer cross section. A dispersion equation for describing waves with real kx21 and kx22 values is obtained. Using this equation, the characteristics of spin waves in a one-side metallized ferrite plate (a special case of a bigyrotropic layer) are calculated for the frequencies above the ferromagnetic resonance frequency. It is found for these waves that quantity kx21 can take both real and imaginary values, while quantity kx22, only real ones. It is found that, at a certain frequency, the spin wave has an isofrequency curve almost identical to a straight line.

Abstract Image

切向磁化单面金属化双涡旋层中的电磁波(计算自旋波特性的实例)
摘要在不使用静磁近似的情况下,解决了电磁波在切向磁化的单面金属化双涡旋层中的任意传播问题。结果表明,在该问题中,麦克斯韦方程组被简化为一个微分方程,对应于一个具有四根kx21、-kx21、kx22和-kx22的双二次特征方程,描述了波在层截面上的分布。得到了描述具有kx21和kx22实值的波的色散方程。利用该方程,计算了单面金属化铁氧体板(双涡旋层的特例)在铁磁共振频率以上的自旋波特性。我们发现对于这些波,kx21可以取实值和虚值,而kx22只能取实值。结果表明,在一定频率下,自旋波具有一条近似于直线的同频曲线。
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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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