Nonlinear analysis on electrical properties in a bended composite piezoelectric semiconductor beam

Abstract

In this paper, the interactions between the transverse loads and the electrical field quantities are investigated based on the nonlinear constitutive relation. By considering a composite beam consisting of a piezoelectric semiconductor and elastic layers, the nonlinear model is established based on the phenomenological theory and Euler’s beam theory. Furthermore, an iteration procedure based on the differential quadrature method (DQM) is developed to solve the nonlinear governing equations. Before analysis, the convergence and correctness are surveyed. It is found that the convergence of the proposed iteration is fast. Then, the transverse pressure induced electrical field quantities are investigated in detail. From the calculated results, it can be found that the consideration of nonlinear constitutive relation is necessary for a beam undergoing a large load. Compared with the linear results, the consideration of the nonlinear constitutive relation breaks the symmetry for the electric potential, the electric field, and the perturbation carrier density, and has little influence on the electric displacement. Furthermore, the non-uniform pressures are considered. The results show that the distributions of the electric field quantities are sensitively altered. It indicates that the electrical properties can be manipulated with the design of different transverse loads. The conclusions in this paper could be the guidance on designing and manufacturing electronic devices accurately.