Electrodeposition of copper on a copper single crystal (111) face in the presence of bromide ions

S. Nageswar
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Abstract

Observations were made of copper electrodeposits on the (111) plane of copper from highly purified solutions of copper sulphate containing known concentrations from 10-3 to 10-10 mol/l of HBr. The pyramidal growth becomes truncated and transforms to a layer growth which gives rise to ridges and then to a polycrystalline deposit. At higher current densities, transition from one type of growth to another is gradual.

在溴化物离子存在下,在铜单晶(111)表面上电沉积铜
用已知浓度为10-3 ~ 10-10 mol/l HBr的高纯度硫酸铜溶液,在铜的(111)平面上观察了铜的电沉积。锥形生长被截断并转变为层状生长,从而产生脊状生长,然后形成多晶沉积。在较高的电流密度下,从一种生长类型向另一种生长类型的转变是渐进的。
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