Lattice site occupation of non-soluble elements implanted in metals

O. Meyer, A. Turos
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Abstract

A question of fundamental interest in ion implantation metallurgy concerns the lattice site which the implanted ions will occupy at the end of their trajectories. This review describes the results of a systematic study on the basic mechanisms which determine the lattice site occupation of impurities implanted in metals. Current models on the prediction of the substitutionality are reviewed and the mechanisms of impurity-point-defect interactions on the lattice site occupation are outlined. Recent experimental results are reviewed which demonstrate that implanted ions will preferentially occupy substitutional lattice sites within the relaxation phase of the collision cascade. Their displacements from the substitutional sites are due to the interaction with point defects which leads to the formation of defect-impurity complexes. These processes occur during the cooling phase of the cascade and at temperatures at which point defects are mobile. The probability of the complex formation increases as a function of the heat of solution and the size-mismatch energy.

金属中不溶性元素的点阵占位
离子注入冶金学的一个基本问题涉及注入离子在其轨迹末端所占据的晶格位置。本文介绍了一项系统研究的结果,决定晶格位置占据的基本机制的杂质植入金属。综述了目前预测取代性的模型,并概述了杂质-点-缺陷相互作用对晶格占位的影响机制。本文回顾了近年来的实验结果,表明注入离子会优先占据碰撞级联弛豫阶段的取代晶格位。它们从取代位上的位移是由于与点缺陷的相互作用导致缺陷-杂质配合物的形成。这些过程发生在级联的冷却阶段,并且在缺陷可移动的温度下发生。络合物形成的可能性随着溶液热和尺寸不匹配能量的增加而增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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