Electron induced adsorption, desorption and decomposition of ammonia on GaAs(100)

Y.-M. Sun, D.W. Sloan, T. Huett, J.M. White, John G. Ekerdt
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Abstract

The desorption and dissociation of ammonia adsorbed on (GaAs(100) occurs readily upon activation with 50 eV electrons. Complementary results from temperature programmed desorption and X-ray photoelectron spectroscopy indicate that the cross-sections for parent desorption and for dissociation to NHx (= 1, 2) are similar (10−16−10−17 cm2), whereas that for nitride production is two orders of magnitude smaller. All these are more than an order of magnitude higher than observed in analogous photon-driven reactions.

电子诱导氨在GaAs(100)上的吸附、解吸和分解
吸附在(GaAs(100)上的氨在50 eV电子的激活下容易发生解吸和解离。程序升温解吸和x射线光电子能谱的互补结果表明,母体解吸和解离成NHx(= 1,2)的截面相似(10−16−10−17 cm2),而氮化物生成的截面要小两个数量级。所有这些都比在类似的光子驱动反应中观察到的高一个数量级以上。
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