Atomic layer epitaxy

Tuomo Suntola
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Abstract

This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display devices. Accordingly, early work on ALE was mainly carried out for thin films. During the 80s there has been a growing interest in applying ALE in the growth of single crystals of III–V and II–VI compounds and ordered heterostructures such as layered superalloys and superlattices. ALE has also been extended to the growth of elemental single crystals. A basic advantage of atomic layer epitaxy is in the increased surface control of the growth. This is achieved by combining a sequential reactant interaction with a substrate at a temperature which prevents condensation of individual reactants on the growing surface. This results in a stepwise process where each reactant interaction is typically saturated to a monolayer formation. Accordingly, the rate of the growth in an ALE process is determined by the repetition rate of the sequential surface reactions, and the thickness of the resulting layer is determined by the number of reactant interaction cycles. This self-controlling feature of atomic layer epitaxy ensures excellent uniformity of the thickness over large substrate areas even on non-planar surfaces. Owing to its principle of operation, ALE is especially suitable for producing layered structures of III–V and II–VI compounds. Superlattice structures of both these material groups have already been demonstrated. As a limiting case of superlattices, layered superalloys have also been grown. In ALE, chemical reactions producing a material, are divided into separate subreactions between a vapor and a solid surface, each of which results in a new atomic layer of the material. From the theoretical point of view ALE offers a unique link between theoretical and experimental chemistry by permitting direct observations of subreactions under conditions where the chemical environment is more precisely determined than in conventional continuous reactions.

原子层外延
本文综述了原子层外延(ALE)技术的发展和现状。原子层外延是一种单原子层生长晶体和多晶材料的技术。原子层外延技术最初是为了满足电致发光薄膜显示器件对改进ZnS薄膜和介电薄膜的需求而发展起来的。因此,早期的ALE工作主要是针对薄膜进行的。在20世纪80年代,人们对利用ALE生长III-V和II-VI化合物的单晶和有序异质结构(如层状高温合金和超晶格)的兴趣日益浓厚。ALE也被扩展到单晶元素的生长。原子层外延的一个基本优点是增加了对生长的表面控制。这是通过在一定温度下将顺序反应物与底物相互作用相结合来实现的,该温度可以防止单个反应物在生长表面上凝结。这导致了一个循序渐进的过程,其中每个反应物相互作用通常饱和到单层形成。因此,在ALE过程中的生长速率由连续表面反应的重复速率决定,而生成层的厚度由反应物相互作用循环的次数决定。原子层外延的这种自我控制特性确保了即使在非平面表面上,在大衬底区域上的厚度均匀性。由于其工作原理,ALE特别适合于制备III-V和II-VI化合物的层状结构。这两种材料的超晶格结构已经被证明。层状高温合金是超晶格的一种极限情况。在ALE中,产生材料的化学反应被分为蒸汽和固体表面之间的单独亚反应,每个亚反应都会产生材料的新原子层。从理论角度来看,ALE提供了理论和实验化学之间的独特联系,允许在化学环境比传统连续反应更精确地确定的条件下直接观察子反应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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