The Fundamental Gamma Rays and Charge Particle Interactions of the CeBr 3 Scintillator

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
W. Chaiphaksa, W. Cheewasukhanont, J. Kaewkhao, N. Sangwaranatee
{"title":"The Fundamental Gamma Rays and Charge Particle Interactions of the CeBr <sub>3</sub> Scintillator","authors":"W. Chaiphaksa, W. Cheewasukhanont, J. Kaewkhao, N. Sangwaranatee","doi":"10.1080/10584587.2023.2234627","DOIUrl":null,"url":null,"abstract":"Abstract The research aims to study the primary interaction between gamma radiation in CeBr3 crystal. The analysis of mass attenuation coefficient (MAC), effective atomic number (Z eff), electron density (N eff), mean free path (MFP), and energy absorption buildup factor (EABF) was evaluated using the using the WinXCom software. Also, the interaction with charged particles as the total mass stopping power (TMSP), projected range (PR) of proton ( ) and alpha ( ) particles were evaluated by SRIM programming. The results found that the MAC depends on the energy ranges, the photoelectric effect is the main interaction at low energy ranges, Compton scattering phenomena illustrate and evidents at intermediate energy ranges, and pair production characteristics dominate over on 1.022 MeV in high energy ranges. Moreover, absorption edges appear on energy’s discontinuity at low energy. The Z eff and N eff show similar trends and correspond to the energy ranges. The MFP of the CeBr3 compared with some standard scintillators such as NaI and BGO crystal and found that the BGO responds to faster interaction than CeBr3 and NaI crystals. The EABF shows scattering energies followed by atomic equivalent (Z eq), and they also increase with increasing penetration depth (mfp). The TMSP and PR depend on charged particles, density, and the unit path distance of a material.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":null,"pages":null},"PeriodicalIF":0.7000,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234627","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Abstract The research aims to study the primary interaction between gamma radiation in CeBr3 crystal. The analysis of mass attenuation coefficient (MAC), effective atomic number (Z eff), electron density (N eff), mean free path (MFP), and energy absorption buildup factor (EABF) was evaluated using the using the WinXCom software. Also, the interaction with charged particles as the total mass stopping power (TMSP), projected range (PR) of proton ( ) and alpha ( ) particles were evaluated by SRIM programming. The results found that the MAC depends on the energy ranges, the photoelectric effect is the main interaction at low energy ranges, Compton scattering phenomena illustrate and evidents at intermediate energy ranges, and pair production characteristics dominate over on 1.022 MeV in high energy ranges. Moreover, absorption edges appear on energy’s discontinuity at low energy. The Z eff and N eff show similar trends and correspond to the energy ranges. The MFP of the CeBr3 compared with some standard scintillators such as NaI and BGO crystal and found that the BGO responds to faster interaction than CeBr3 and NaI crystals. The EABF shows scattering energies followed by atomic equivalent (Z eq), and they also increase with increasing penetration depth (mfp). The TMSP and PR depend on charged particles, density, and the unit path distance of a material.
cebr3闪烁体的基本伽马射线和电荷粒子相互作用
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信