Effects of La-Doped HfO ₂ Films on Dielectric Properties by Sol-Gel Method

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234607

Suparat Tongpeng, Suttipong Wannapaiboon, Penphitcha Amonpattaratkit, Praphaphon Silawong, Pattanaphong Janphuang, Rungrueang Pattanakul, Sukanda Jiansirisomboon

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引用次数: 0

Abstract

Abstract HfO2 and La-doped HfO2 with 20, 40, 50, and 60 mol% were deposited on silicon wafers by spin-coating technique. The crystallization process was annealed temperature at 600 °C. Then, characterization techniques of XRD, AFM, SEM, Full-field XRF imaging, and XAS were applied to reveal structural morphology, local structure, grain, distribution, etc. This study aims to investigate the effect of doping La into the HfO2 system on surface formation, microstructure, and dielectric properties. According to the results, RMS surface roughness, and grain size increased relative to La concentration levels. These films demonstrated homogeneous, low surface roughness, and crack-free. The XRD confirms the existence of the monoclinic phase in pure HfO2 and the mixture phase of the monoclinic and orthorhombic phases in La-doped HfO2 films. Increasing La concentration caused the structural transformation, the XAS of La L3 -edge indicating that lanthanum remained in the HfO2 system. Dielectric response based on interface-phase polarization was improved with La content from 0 mol% to 60 mol%. Compared with HfO2 film, the dielectric constant of La-doped HfO2 films was increased and dielectric loss was decreased.

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溶胶-凝胶法研究la掺杂HfO - 2薄膜介电性能的影响

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.

Effects of La-Doped HfO 2 Films on Dielectric Properties by Sol-Gel Method

Abstract

Effects of La-Doped HfO ₂ Films on Dielectric Properties by Sol-Gel Method