Near-Infrared Switch Effect of Polarization Modulation Induced by Guided Mode Resonance in Dielectric Grating

Kaili Kuang, Qiao Wang, Xiaomin Yuan, Yutong Yang, Han Chu, Fangjin Chang, Wei Peng
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Abstract

Abstract Light intensity modulation is crucial to the development of optical imaging, optical sensing, and optical switch. The light intensity modulation methods, such as changing structural parameters, external temperature, or external voltage make the control process time consuming and complex. The plasmonic polarization modulation is an effective way to modulate light intensity, but this method is limited by the excitation of surface plasmons with transverse magnetic (TM) polarized light. Herein, we report another polarization modulation method of light intensity based on guided mode resonance in the dielectric grating excited by transverse electric (TE) polarized light. The nanosystem is composed of Si grating and TiN substrate. By adjusting the polarization states of the incident light from TE to TM, the proposed nanosystem exhibits an outstanding light intensity modulation performance with a relative modulation depth of 25833%. The proposed method provides another way for modulating light intensity, which has potential applications of optical switch, optical imaging, and optical anti-counterfeiting.
介质光栅导模共振诱导偏振调制的近红外开关效应
光强调制对于光学成像、光传感和光开关的发展至关重要。光强调制方法,如改变结构参数、外部温度或外部电压,使控制过程耗时且复杂。等离子体偏振调制是一种有效的光强调制方法,但这种方法受到表面等离子体受横向磁偏振光激发的限制。本文报道了另一种基于横向电偏振光激发介质光栅导模共振的光强偏振调制方法。该纳米系统由Si光栅和TiN衬底组成。通过调节入射光从TE到TM的偏振态,该纳米系统具有优异的光强调制性能,相对调制深度为25833%。该方法为光强调制提供了另一种途径,在光开关、光学成像、光学防伪等方面具有潜在的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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