Topological Electronic Structures of Quasi-one-dimensional Bismuth Halides Investigated by Angle-resolved Photoemission Spectroscopy

Ryo NOGUCHI
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Abstract

Quasi-one-dimensional materials offer an ideal playground to investigate weak topological insulators (WTIs) and higher-order topological insulators (HOTIs), since their characteristic boundary states emerge in the naturally cleaved surfaces. Utilizing laser-based angle-resolved photoemission spectroscopy (ARPES) and synchrotron-based nano-ARPES, we show evidence of a WTI phase in β-Bi4I4 and a HOTI phase in Bi4Br4.
角分辨光谱学研究准一维卤化铋的拓扑电子结构
准一维材料为研究弱拓扑绝缘子(wti)和高阶拓扑绝缘子(HOTIs)提供了理想的平台,因为它们的特征边界态出现在自然劈裂表面。利用基于激光的角分辨光发射光谱(ARPES)和基于同步加速器的纳米ARPES,我们发现β-Bi4I4中存在WTI相和Bi4Br4中存在HOTI相。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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