Effects of Na Excess on the Crystal Structure Ferroelectric and Piezoelectric Properties of (Bi 0.487 Na 0.427 K 0.06 Ba 0.026 )TiO 3 Lead-Free Piezoceramics
IF 0.7 4区 工程技术Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
{"title":"Effects of Na Excess on the Crystal Structure Ferroelectric and Piezoelectric Properties of (Bi <sub>0.487</sub> Na <sub>0.427</sub> K <sub>0.06</sub> Ba <sub>0.026</sub> )TiO <sub>3</sub> Lead-Free Piezoceramics","authors":"Wanchaloem Maitreesittikorn, Pathit Premwichit, Sasipohn Prasertpalichat","doi":"10.1080/10584587.2023.2234628","DOIUrl":null,"url":null,"abstract":"AbstractIn this research, (Bi0.487Na0.427K0.06Ba0.026)TiO3 ceramics were prepared by conventional solid-state mixed-oxide method to incorporate Na excess according to the chemical formula (Bi0.487Na0.427+xK0.06Ba0.026)TiO3, where x = 0.0, 0.005, 0.010, 0.015 and 0.020. The crystal structure, dielectric, ferroelectric and piezoelectric properties were systematically investigated with respect to the amount of Na excess. X-ray diffraction data identified pure perovskite structure for all compositions. The pseudocubic structure was observed for x = 0.0 − 0.005 before it transformed to rhombohedral structure at x ≥ 0.015. The grain size tended to be larger with increasing Na excess amount. Increasing x also led to a substantial increase in ferroelectric-relaxor transition temperature (TF-R) from 80 °C (x = 0) to 110 °C (x = 0.020). With increasing x from 0 to 0.020, the standard polarization-electric field (P-E) hysteresis measurements revealed a reduction in remanent polarization (Pr) together with an increase in coercive field (Ec), which was further confirmed by the remanent P-E hysteresis measurements. In addition, the piezoelectric constant (d33) was also found to steadily decrease as x increased. The observation of increased TF-R and Ec along with a decrease in d33 and Pr indicated a stabilization of ferroelectric order induced by Na excess. This research highlights the importance of sufficient control over A-site stoichiometry and how it affects the ferroelectric and piezoelectric properties of BNT-based ceramics.Keywords: Lead-free BNT-BKT-BT ceramicsNa-excessA-site nonstoichiometryFerroelectric propertiesPiezoelectric properties AcknowledgmentsThis work received financial support from the National Science, Research, and Innovation Fund (NSRF) through Naresuan University (Grant No. R2565B059). The authors would like to extend their gratitude to Prof. Dr. Gobwute Rujijanakul for providing facility support with the ferroelectric test system at Electroceramics research laboratory, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University. Additionally, special thanks are given to Dr. Nitish Kumar for his invaluable assistance in proofreading and grammar check the manuscript.Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"19 4","pages":"0"},"PeriodicalIF":0.7000,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234628","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
AbstractIn this research, (Bi0.487Na0.427K0.06Ba0.026)TiO3 ceramics were prepared by conventional solid-state mixed-oxide method to incorporate Na excess according to the chemical formula (Bi0.487Na0.427+xK0.06Ba0.026)TiO3, where x = 0.0, 0.005, 0.010, 0.015 and 0.020. The crystal structure, dielectric, ferroelectric and piezoelectric properties were systematically investigated with respect to the amount of Na excess. X-ray diffraction data identified pure perovskite structure for all compositions. The pseudocubic structure was observed for x = 0.0 − 0.005 before it transformed to rhombohedral structure at x ≥ 0.015. The grain size tended to be larger with increasing Na excess amount. Increasing x also led to a substantial increase in ferroelectric-relaxor transition temperature (TF-R) from 80 °C (x = 0) to 110 °C (x = 0.020). With increasing x from 0 to 0.020, the standard polarization-electric field (P-E) hysteresis measurements revealed a reduction in remanent polarization (Pr) together with an increase in coercive field (Ec), which was further confirmed by the remanent P-E hysteresis measurements. In addition, the piezoelectric constant (d33) was also found to steadily decrease as x increased. The observation of increased TF-R and Ec along with a decrease in d33 and Pr indicated a stabilization of ferroelectric order induced by Na excess. This research highlights the importance of sufficient control over A-site stoichiometry and how it affects the ferroelectric and piezoelectric properties of BNT-based ceramics.Keywords: Lead-free BNT-BKT-BT ceramicsNa-excessA-site nonstoichiometryFerroelectric propertiesPiezoelectric properties AcknowledgmentsThis work received financial support from the National Science, Research, and Innovation Fund (NSRF) through Naresuan University (Grant No. R2565B059). The authors would like to extend their gratitude to Prof. Dr. Gobwute Rujijanakul for providing facility support with the ferroelectric test system at Electroceramics research laboratory, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University. Additionally, special thanks are given to Dr. Nitish Kumar for his invaluable assistance in proofreading and grammar check the manuscript.Disclosure StatementNo potential conflict of interest was reported by the author(s).
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.