Optical Properties of CuCdS Thin Film Prepared by Vacuum Thermal Evaporation Technique

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234609

Montree Hankoy, Paramapat Treetornkeerati, Natasia Fungfuang, S. Tipawan Khlayboonme, Mettaya Kitiwan, Phacharaphon Tunthawiroon

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Abstract

AbstractThis study reports on the synthesis and characterizations of copper cadmium sulfide (CuCdS) thin films prepared using the vacuum thermal evaporation technique with copper sulfide and CdS as precursors in a 1:1 molar ratio. The structural properties of the thin films were analyzed using X-ray diffraction (XRD) which revealed that the main composition of the thin film was CdS with the preferred orientation of the (101) plane. The optical properties were examined using UV–Vis spectrophotometry. The photosensitivity of the films was determined using I–V measurements performed with a two-probe technique. The prepared CuCdS thin films have high optical transmittance of 92%.Keywords: CuCdSthermal evaporation techniqueoptical propertiesthin film AcknowledgmentsM. Hankoy would like to thank and appreciate Assoc. Prof. Dr. Thitinai Gaewdang and Assoc. Prof. Ngamnit Wongcharoen for imparting not only tremendous scientific knowledge but also genuine care and affection to the author.Disclosure StatementNo potential conflict of interest was reported by the author(s).

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真空热蒸发法制备CuCdS薄膜的光学性质

摘要本文报道了以硫化铜和硫化镉为前驱体，以1:1的摩尔比，采用真空热蒸发技术制备硫化铜镉(CuCdS)薄膜的合成和表征。利用x射线衍射(XRD)分析了薄膜的结构性质，发现薄膜的主要成分是cd，取向为(101)面。用紫外可见分光光度法测定了其光学性质。利用双探针技术进行I-V测量，确定了薄膜的光敏性。制备的CuCdS薄膜具有92%的高透光率。关键词:cucd;热蒸发技术;光学特性;Hankoy感谢并感谢Assoc。Thitinai Gaewdang教授和Assoc。Ngamnit Wongcharoen教授不仅传授了丰富的科学知识，而且对作者的关怀和感情。披露声明作者未报告潜在的利益冲突。

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.