Effect of Firing Temperatures on Phase Formation, Microstructure, Dielectric and Magnetic Properties of Ni 0.6 Zn 0.4 Fe 2 O 4 Ceramics Synthesized by the Solid-State Combustion Technique
IF 0.7 4区 工程技术Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0
Abstract
AbstractIn this study, the effect of firing temperatures on phase formation, microstructure dielectric and magnetic properties of Ni0.6Zn0.4Fe2O4 (NZFO) ceramics were investigated. The NZFO powder were synthesized by the solid-state combustion technique using glycine as a fuel to reduce the reaction temperature. All samples were calcined in the range of 900 °C–1100 °C for 2 h and sintered in the range of 1175 °C–1275 °C for 2 h. A pure ferrite phase was found in the powders calcined above 1000 °C and the average particle size of NZFO powders was increased from 0.39 µm to 0.59 µm when the calcination temperature was increased. The x-ray diffraction (XRD) analysis results confirmed the formation of pure spinel structure with cubic phase in all the ceramic samples. The average grain size (5.54–2.80 µm) was slightly decreased, and the dielectric constant (239–13) tended to decrease with increasing sintering temperature. As the sintering temperature increased to 1250 °C, it was found that the lattice parameters (8.366–8.387 Å), the density (5.29–5.35 g/cm3), and saturation magnetization (81.51–93.92 emu/g) tended to increase after that decrease.Keywords: NZFOsolid-state combustion techniquephase structuremicrostructuremagnetic properties AcknowledgmentsThe authors thank the Department of Physics, Faculty of Science, Naresuan University for their supporting facilities. Thanks are also given to Asst. Prof. Dr. Kyle V. Lopin for his help in editing the manuscript.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported by Naresuan University (NU) and National Science, Research and Innovation Fund (NSRF) with Grant No. [R2565B059].
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.