Donna Helen Rajagukguk, Juniastel Rajagukguk, Rita Juliani, Chayani Sarumaha, Jakrapong Kaewkhao
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引用次数: 1
Abstract
AbstractThe borophosphate glasses compositions based on (64-x)P2O5-5B2O3-15ZnO-15Li2O-xX-1Sm2O3 (x = 0 & 15; X = CaF2) are prepared by melting and quenched technique. The optical and photoluminescence were obtained from the UV-Vis-NIR spectrophotometer and spectrofluorophotometer. The ground state 6H5/2 as the start transition in the absorption spectrum and the Judd-Ofelt intensity parameters (Ω2, Ω4, and Ω6) were determined. The emission spectra of borophosphate glass with CaF2 were recorded at an excitation of 401 nm which gave four peaks namely 6H5/2, 6H7/2, 6H9/2, and 6H11/2. The results of radiative properties for the 4G5/2 → 6H7/2 transition were found to be higher in the zinc borophosphate glass without fluoride. Based on these results, zinc borophosphate glass can be used as a candidate for the orange laser application.Keywords: Zinc borophosphateabsorptionphotouminescenceradiative AcknowledgmentsThe authors would like to thank the Directorate general of higher education, Ministry of Education, Culture, Research and Technology of the Republic of Indonesia for the funding grand Penelitian Tesis Magister No. 124/E5/PG.02.00.PT/2022.Disclosure StatementNo potential conflict of interest was reported by the author(s).
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.