Triboelectric Nanogenerator Prepared from Poly(vinylidene Fluoride-Hexafluoropropylene) Polymer Composite

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234612

Pattarasuda Wannarumon, Pichet Limsuwan, Pisan Sukwisute, Nuttakrit Somdock

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引用次数: 0

Abstract

AbstractIn this work, poly(vinylidene fluoride-hexafluoropropylene)/reduced graphene oxide films were prepared by the solution casting method with N,N-dimethylformamide (DMF) and DMF/acetone mixed solvents. The effects of reduced graphene oxide and solvent type on the morphology and crystal structure of the composite films were investigated by using scanning electron microscopy, Fourier-transform infrared spectroscopy, and Raman spectroscopy, respectively. The morphology study showed that the addition of acetone in the film process resulted in the occurrence of tiny pores on the film surfaces. The reduced graphene oxide incorporated into the PVDF-HFP was able to promote the formation of β- phase in the composites. The maximum power of 15.58 µW was obtained from the films using DMF/acetone mixture as solvent.Keywords: Triboelectric nanogeneratoracetoneN,N-dimethylformamidepoly(vinylidene fluoride-hexafluoropropylene)reduced graphene oxide Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was financially supported by the School of Science, King Mongkut’s Institute of Technology Ladkrabang under grant number RA/TA-2562-M-023), Thailand. The authors also acknowledge the Scientific Instruments Centre, School of Science, King Mongkut’s Institute of Technology Ladkrabang for Scientific Instrument Support.

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用聚偏氟乙烯-六氟丙烯聚合物复合材料制备摩擦电纳米发电机

摘要以N,N-二甲基甲酰胺(DMF)和DMF/丙酮为混合溶剂，采用溶液浇铸法制备了聚偏氟乙烯-六氟丙烯/还原氧化石墨烯薄膜。利用扫描电镜、傅里叶变换红外光谱和拉曼光谱研究了还原氧化石墨烯和溶剂类型对复合膜形貌和晶体结构的影响。形貌研究表明，在成膜过程中丙酮的加入使膜表面出现了细小的孔隙。将还原氧化石墨烯加入到PVDF-HFP中，可以促进复合材料中β相的形成。以DMF/丙酮混合物为溶剂，膜的最大功率为15.58µW。关键词:摩擦电纳米发电机，丙酮烯，n -二甲基甲酰胺聚(偏氟乙烯-六氟丙烯)还原氧化石墨烯披露声明作者未报告潜在的利益冲突。本研究由泰国Ladkrabang蒙库特国王理工学院科学学院资助，资助号为RA/TA-2562-M-023。作者还对科学仪器中心、科学学院、King Mongkut’s Technology Institute of Ladkrabang的科学仪器支持表示感谢。

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.