A 41-GHz 19.4-dBm P<sub>sat</sub> CMOS Doherty power amplifier for 5G NR applications

IF 0.8 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Ieice Electronics Express Pub Date : 2023-03-10 DOI:10.1587/elex.20.20220558

Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, Atsushi Shirane, Kenichi Okada

引用次数: 1

Abstract

In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65nm CMOS technology is introduced for 5G New Radio (NR) applications. The proposed PA implements the transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). A tunable 90-deg hybrid coupler is proposed for output phase compensation. This work achieves a saturated output power (Psat) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under a 1-V power supply. The peak PAE and the PAE at 6-dB output power back-off (PBO) are 30.4% and 19.2%, respectively. This work also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM and OFDMA-mode 400-MHz 256QAM. The core chip area is 0.22 mm2 with a static power consumption of 76mW.

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41 ghz 19.4 dbm P<sub>sat</sub>用于5G NR应用的CMOS Doherty功率放大器

在这封信中，介绍了用于5G新无线电(NR)应用的标准65nm CMOS技术的41 ghz Doherty功率放大器(PA)。该方案采用基于变压器的并联组合Doherty结构，提高了功率附加效率(PAE)。提出了一种可调90度混合式耦合器用于输出相位补偿。在1v电源下，在41.5GHz下实现了19.4dBm的饱和输出功率(Psat)和18.6dBm的OP1dB。峰值PAE和6db输出功率回退时的PAE分别为30.4%和19.2%。这项工作还支持单载波模式(sc模式)400-MSymbols/s 256QAM和ofdma模式400-MHz 256QAM。核心芯片面积为0.22 mm2，静态功耗为76mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Ieice Electronics Express 工程技术-工程：电子与电气

CiteScore

1.50

自引率

37.50%

发文量

119

审稿时长

1.1 months

期刊介绍： An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications