角度分解光電子分光によるBi(111)上Sb超薄膜の電子状態

Abstract

To investigate electronic states at the interface between surfaces that exhibit unique spin-split band dispersions is an important step in the development of a new materials that can be used to spintronics device. Antimony (Sb) and bismuth (Bi) are interesting targets for studying the nature of peculiar spin properties due to spin-orbit interactions. In this study, we fabricated the Sb ultrathin films on Bi substrate. The surface structure and electronic states of Sb/Bi heterostructure was confirmed by the low-energy electron diffraction measurement and angle-resolved photoemission spectroscopy, respectively. For 2 and 3 BL Sb film on Bi substrate, we observed a “V”-shaped electronic band, which is significantly different from the electronic state of Bi thin film and freestanding Sb ultrathin film. We conclude that this band dispersion is caused by the tensile lattice strain of Sb ultrathin film and the hybridization effect of the wavefunction with the Bi substrate.