Technology Remapping Approach Using Multi-Gate Reconfigurable Cells for Post-Mask Functional ECO

IF 0.4 4区 计算机科学 Q4 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Tomohiro NISHIGUCHI, Nobutaka KUROKI, Masahiro NUMA
{"title":"Technology Remapping Approach Using Multi-Gate Reconfigurable Cells for Post-Mask Functional ECO","authors":"Tomohiro NISHIGUCHI, Nobutaka KUROKI, Masahiro NUMA","doi":"10.1587/transfun.2023vlp0015","DOIUrl":null,"url":null,"abstract":"This paper proposes multi-gate reconfigurable (RECON) cells and a technology remapping approach using them as spare cells for post-mask functional engineering change orders (ECOs). With the rapid increase in circuit complexity, ECOs often occur in the post-mask stage of LSI designs. To deal with post-mask ECOs at a low cost, only the metal layers are redesigned by making functional changes using spare cells. For this purpose, 2T/4T/6T-RECON cells were proposed as reconfigurable spare cells. However, conventional RECON cells are used to implement single functions, which may result in unused transistors in the cells. In addition, the number of 2T/4T/6T-RECON spare cells used for post-mask ECOs varies greatly depending on the circuit to be implemented and the type of ECO that occurs. Therefore, functional ECOs may fail due to a lack of certain types of RECON cells, even if other types of RECON cells remain. To solve this problem, we propose multi-gate RECON cells that implement multiple functions in a single RECON cell while retaining the layouts of conventional 4T/6T-RECON base cells, and a technology remapping approach using them. The proposed approach not only reduces the number of used spare cells for modifications but also allows the flexible use of spare cells to fix them with less increase in wire length and delay. Experimental results have confirmed that the functional ECO success ratio is increased by 4.8 pt on average and the total number of used spare cells is reduced by 5.6% on average. It has also been confirmed that the increase in wire length is reduced by 17.4% on average and the decrease in slack is suppressed by 21.6% on average.","PeriodicalId":55003,"journal":{"name":"Ieice Transactions on Fundamentals of Electronics Communications and Computer Sciences","volume":null,"pages":null},"PeriodicalIF":0.4000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ieice Transactions on Fundamentals of Electronics Communications and Computer Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/transfun.2023vlp0015","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

This paper proposes multi-gate reconfigurable (RECON) cells and a technology remapping approach using them as spare cells for post-mask functional engineering change orders (ECOs). With the rapid increase in circuit complexity, ECOs often occur in the post-mask stage of LSI designs. To deal with post-mask ECOs at a low cost, only the metal layers are redesigned by making functional changes using spare cells. For this purpose, 2T/4T/6T-RECON cells were proposed as reconfigurable spare cells. However, conventional RECON cells are used to implement single functions, which may result in unused transistors in the cells. In addition, the number of 2T/4T/6T-RECON spare cells used for post-mask ECOs varies greatly depending on the circuit to be implemented and the type of ECO that occurs. Therefore, functional ECOs may fail due to a lack of certain types of RECON cells, even if other types of RECON cells remain. To solve this problem, we propose multi-gate RECON cells that implement multiple functions in a single RECON cell while retaining the layouts of conventional 4T/6T-RECON base cells, and a technology remapping approach using them. The proposed approach not only reduces the number of used spare cells for modifications but also allows the flexible use of spare cells to fix them with less increase in wire length and delay. Experimental results have confirmed that the functional ECO success ratio is increased by 4.8 pt on average and the total number of used spare cells is reduced by 5.6% on average. It has also been confirmed that the increase in wire length is reduced by 17.4% on average and the decrease in slack is suppressed by 21.6% on average.
基于多栅极可重构单元的掩模后功能ECO技术重映射方法
本文提出了多栅极可重构单元(RECON)和一种技术映射方法,利用它们作为掩模后功能工程变更单(ECOs)的备用单元。随着电路复杂度的迅速增加,在大规模集成电路设计的后掩模阶段经常出现ecoo。为了以低成本处理掩膜后的eco,只需通过使用备用电池进行功能改变来重新设计金属层。为此,提出2T/4T/6T-RECON单元作为可重构备用单元。然而,传统的RECON单元用于实现单一功能,这可能导致单元中未使用的晶体管。此外,用于后掩模ECO的2T/4T/6T-RECON备用电池的数量根据要实现的电路和发生的ECO类型而有很大差异。因此,即使存在其他类型的RECON细胞,功能性eco也可能由于缺乏某些类型的RECON细胞而失效。为了解决这个问题,我们提出了在一个RECON单元中实现多种功能的多栅极RECON单元,同时保留了传统4T/6T-RECON基单元的布局,以及使用它们的技术重新映射方法。所提出的方法不仅减少了用于修改的备用电池的数量,而且允许灵活使用备用电池来固定它们,同时减少了导线长度和延迟的增加。实验结果表明,该系统的功能性ECO成功率平均提高了4.8 pt,备用电池使用总量平均减少了5.6%。钢丝长度的增加平均减少了17.4%,松弛的减少平均抑制了21.6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
1.10
自引率
20.00%
发文量
137
审稿时长
3.9 months
期刊介绍: Includes reports on research, developments, and examinations performed by the Society''s members for the specific fields shown in the category list such as detailed below, the contents of which may advance the development of science and industry: (1) Reports on new theories, experiments with new contents, or extensions of and supplements to conventional theories and experiments. (2) Reports on development of measurement technology and various applied technologies. (3) Reports on the planning, design, manufacture, testing, or operation of facilities, machinery, parts, materials, etc. (4) Presentation of new methods, suggestion of new angles, ideas, systematization, software, or any new facts regarding the above.
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信