CAVITATION EROSION RESISTANCE OF VACUUM-ARC COATINGS BASED ON TiN

IF 0.5 Q4 PHYSICS, NUCLEAR

Problems of Atomic Science and Technology Pub Date : 2023-10-12 DOI:10.46813/2023-147-126

І.О. Klimenko, V.G. Marinin, V.А. Belous, N.A. Azarenkov, М.G. Ishchenko, V.S. Goltvyanytsya, A.S. Kuprin

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Abstract

This review presents an examination of various studies investigating the impact of deposition process conditions and structural characteristics of TiN-based vacuum-arc coatings on their ability to withstand cavitation erosion in water. The structural and phase composition of TiN coatings is influenced by two key technological parameters: the nitrogen pressure in the vacuum chamber and the substrate bias potential. However, it has been observed that vacuum-arc alloy coatings such as TiSiN and TiAlYN exhibit notably lower resistance to cavitation erosion. Additionally, research on multilayer Ti-TiN coatings with varying numbers and thickness ratios of layers has not shown an improvement in resistance to cavitation wear when compared to single-layer coatings deposited under optimal conditions. On the other hand, single-phase stoichiometric TiN coatings deposited at a higher nitrogen pressure of 2 Pa and a bias potential of up to -300 V have demonstrated remarkable resistance to cavitation wear. These coatings could be effectively utilized to protect the titanium alloy Ti-6Al-4V against cavitation damage.

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锡基真空电弧涂层的抗空化侵蚀性能

本文综述了各种研究tin基真空电弧涂层的沉积工艺条件和结构特性对其耐水中空化侵蚀能力的影响。TiN涂层的结构和相组成受真空室氮气压力和衬底偏压这两个关键工艺参数的影响。然而，已经观察到真空电弧合金涂层(如TiSiN和TiAlYN)对空化侵蚀的抵抗能力明显较低。此外，对不同层数和层厚比的多层Ti-TiN涂层的研究表明，与在最佳条件下沉积的单层涂层相比，其抗空化磨损性能没有提高。另一方面，在更高的氮气压力(2pa)和高达-300 V的偏置电位下沉积的单相化学测量TiN涂层具有显著的抗空化磨损性能。这些涂层可以有效地保护Ti-6Al-4V钛合金免受空化损伤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Problems of Atomic Science and Technology 物理-核科学技术

CiteScore

0.70

自引率

50.00%

发文量

审稿时长

2-4 weeks

期刊介绍： The journal covers the following topics: Physics of Radiation Effects and Radiation Materials Science; Nuclear Physics Investigations; Plasma Physics; Vacuum, Pure Materials and Superconductors; Plasma Electronics and New Methods of Acceleration.