A low-supply-voltage high-power-handling stacked SPDT switch based on feedforward capacitors

IF 0.8 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Ieice Electronics Express Pub Date : 2023-01-01 DOI:10.1587/elex.20.20230360

Jiyang Shen, Li Li, Chen Jin, Qingping Song, Kaijiang Xu, Chao Luo, Fuhai Zhao, Zhiyu Wang, Faxin Yu, Hua Chen

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引用次数: 0

Abstract

In this letter, a 30MHz-3GHz 10W single pole double throw (SPDT) switch with 3.3V low supply voltage fabricated in 0.5um GaAs pHEMT technology process is presented. A feedforward capacitor pair is introduced in each stacked FET, which makes full use of the advantages of high breakdown voltage (VBDG) of GaAs process under low supply voltage and enhances the power handling of each FET unit. Under specific power level, switch with reduced number of stacked FETs and low insertion loss are achieved. Meanwhile, uniform-partial-voltage stacked FET units with different gate width is applied to the switch design, which solves the problem of non-uniform partial voltage caused by parasitic capacitance(Cpd) between stacked FETs. As a result, the power handling of the switch is higher than 40dBm under continuous wave. Besides, the switch designed in this letter achieves 0.5dB insertion loss at 1.5GHz and the input and output return loss is less than -18dB at the whole frequency band. The test results verify the accuracy of the theoretical analysis.

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一种基于前馈电容的低供电电压高功率处理堆叠式SPDT开关

本文介绍了一种采用0.5um GaAs pHEMT工艺制作的30MHz-3GHz 10W单极双掷3.3V低电源电压开关。在每个堆叠FET中引入前馈电容对，充分利用了GaAs工艺在低电源电压下的高击穿电压(VBDG)优势，提高了每个FET单元的功率处理能力。在特定的功率水平下，可以实现减少fet堆叠数量和低插入损耗的开关。同时，将不同栅极宽度的均分电压堆叠FET单元应用于开关设计，解决了堆叠FET之间寄生电容(Cpd)造成的分电压不均匀的问题。在连续波下，开关的功率处理高于40dBm。此外，本文设计的开关在1.5GHz时的插入损耗为0.5dB，整个频段的输入输出回波损耗均小于-18dB。试验结果验证了理论分析的准确性。

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来源期刊

Ieice Electronics Express 工程技术-工程：电子与电气

CiteScore

1.50

自引率

37.50%

发文量

119

审稿时长

1.1 months

期刊介绍： An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications