Modeling of the properties of the semiconductor solid solution Lu1-xVxNiSb in the presence of magnetic ordering

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
V.V. Romaka, V.A. Romaka, Yu. Stadnyk, L. Romaka, A. Horyn, V. Pashkevych, P. Haraniuk
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引用次数: 0

Abstract

Modeling of the thermodynamic, structural, energetic and magnetic properties of the semiconductor solid solution Lu1-xVxNiSb was carried out under the condition of the presence of a magnetic moment on the V atoms and the occurrence of spontaneous magnetization. It is shown that the change in the unit cell parameter a(x) and the mixing enthalpy ΔHmix(х) depends little on the presence or absence of spontaneous magnetization. Modeling of the distribution of the density of electronic states DOS in the presence of a magnetic moment on V atoms revealed the splitting of energy states with spins up and down while preserving the band gap εg of Lu1-xVxNiSb. The relationship between the concentration of magnetic V atoms in Lu1-xVxNiSb and the Curie temperature ТС, when spontaneous magnetization is destroyed and the substance becomes paramagnetic, is established. The solid solution semiconductor Lu1-xVxNiSb, provided spontaneous magnetization is present, can be considered as a promising magnetocaloric.
磁性有序存在下半导体固溶体Lu1-xVxNiSb性质的建模
在V原子存在磁矩和自发磁化的条件下,对半导体固溶体Lu1-xVxNiSb的热力学、结构、能量和磁性进行了建模。结果表明,单胞参数a(x)和混合焓ΔHmix(x)的变化与自发磁化的存在与否关系不大。模拟了V原子在磁矩作用下的电子态密度分布,揭示了在保持Lu1-xVxNiSb带隙εg不变的情况下,自旋向上和向下的能态分裂。建立了Lu1-xVxNiSb中磁性V原子浓度与居里温度ТС之间的关系,当自发磁化被破坏,物质变为顺磁性时。在自发磁化条件下,固溶体半导体Lu1-xVxNiSb可以被认为是一种很有前途的磁热学材料。
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来源期刊
CiteScore
1.70
自引率
14.30%
发文量
83
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