A Computational Perspective on Carbon-Carbon Bond Formation by Single Cu Atom on Pd(111) Surface for CO Electrochemical Reduction

Chen-Cheng Liao, Tsung-Han Tsai, Chun-Chih Chang, Ming-Kang Tsai
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Abstract

This study focuses on the computational characterization of electrochemical C-C bond formation through the CO and CHO coupling process utilizing a dioxo-coordinated Cu single atom site ([CuO2]*) supported on a Pd(111) surface. The stable intermediate, [CuO2]*(CO)2, was identified as a tetradentate-and-tetrahedral species formed upon exposure to CO gaseous molecules. Electrochemically, the hydrogenation of the carbonyl group to CHO was found to be 0.87 eV, conceivably lower than the corresponding step for conventional Cu surfaces. This study observed a considerable charge transfer effect from the top layer of Pd atoms to the adsorbate moiety, especially at the TS structure. This phenomenon resulted in an accessible C-C bond formation barrier at 0.67 eV. Furthermore, the reaction energy of C-C bond formation was found to be exothermic at −0.21 eV, indicating a favorable chemical equilibrium condition. Considering the temperature effect and pressure of the gaseous molecules (CO, CO2, O2), the [CuO2]*(CO)2 intermediate was substantially populated at room temperature and was found to be chemically resilient under dry ambient conditions, as suggested by the kinetic modeling results.
单Cu原子在Pd(111)表面形成碳-碳键的计算研究
本研究的重点是利用Pd(111)表面上的二氧配位Cu单原子位([CuO2]*),通过CO和CHO偶联过程形成电化学C-C键的计算表征。稳定中间体[CuO2]*(CO)2被鉴定为暴露于CO气体分子后形成的四齿体和四面体。电化学上,羰基氢化成CHO的过程为0.87 eV,明显低于传统Cu表面的相应步骤。本研究观察到从顶层Pd原子到吸附质的电荷转移效应,特别是在TS结构中。这一现象导致了在0.67 eV下可达的C-C键形成势垒。此外,C-C键形成的反应能量为放热,为- 0.21 eV,表明具有良好的化学平衡条件。考虑到气体分子(CO, CO2, O2)的温度效应和压力,[CuO2]*(CO)2中间体在室温下大量填充,并且在干燥环境条件下具有化学弹性,这与动力学建模结果一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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