The State Change Per Cycle Map: a novel system-theoretic analysis tool for periodically-driven ReRAM cells

A. Ascoli, N. Schmitt, I. Messaris, A. S. Demirkol, R. Tetzlaff, L. O. Chua
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引用次数: 1

Abstract

Memristive devices are the subject of extensive studies nowadays. While the Dynamic Route Map is a powerful tool for analyzing the response of first-order memristors under DC stimuli, the development of an equivalent tool for investigating the response of these devices to AC stimuli is still an open question. Recently, Pershin and Slipko introduced a graphic method, which we name Time Average State Dynamic Route (TA-SDR), applicable to study first-order memristors subject to periodic rectangular pulse train-based stimuli. In this paper we introduce an alternative investigation tool, referred to as State Change Per Cycle Map (SCPCM), which is applicable in these very same scenarios. The novel analysis technique, inspired by the work of the French mathematician Henri Poincaré, reduces the investigation of a first-order non-autonomous continuous-time system to a simpler study of a first-order discrete-time map. A State Change Per Cycle Map defines precisely how the stimulus modulates each of the admissible device memory states over one input cycle. It is derivable either by means of numerical simulations, where a model for the ReRAM cell is available, or experimentally, in the case where the device memory state is accessible. While the predictive capability of a TA-SDR is limited to those case studies, where the AC periodic voltage signal applied across the device induces negligible changes in the respective memory state over each cycle, the conclusions drawn by analyzing a SCPCM have general validity, irrespective of the properties of the stimulus. The advantages of the novel analysis method for periodically driven ReRAM cells over the classical TA-SDR tool are highlighted through a number of case studies, some of which reveal the interesting capability of the ReRAM cell to display multiple oscillatory operating modes upon periodic stimulation via trains with a suitable number of SET and RESET pulses per period.
每周期状态变化图:周期性驱动的ReRAM电池的一种新的系统理论分析工具
记忆器件是当今广泛研究的课题。虽然动态路线图是分析直流刺激下一阶忆阻器响应的有力工具,但开发一种等效工具来研究这些器件对交流刺激的响应仍然是一个开放的问题。最近,Pershin和Slipko提出了一种图形化方法,我们将其命名为时间平均状态动态路径(TA-SDR),适用于研究周期性矩形脉冲序列刺激下的一阶记忆电阻器。在本文中,我们介绍了一种可选的调查工具,称为每周期状态变化图(SCPCM),它适用于这些非常相同的场景。这种新颖的分析技术受到法国数学家亨利·庞加莱工作的启发,将对一阶非自治连续时间系统的研究简化为对一阶离散时间映射的更简单研究。每周期状态变化图精确地定义了刺激如何在一个输入周期内调节每个可接受的设备存储状态。它可以通过数值模拟来推导,在这种情况下,ReRAM单元的模型是可用的,或者在实验中,在器件存储器状态是可访问的情况下。虽然TA-SDR的预测能力仅限于这些案例研究,其中整个设备上施加的交流周期性电压信号在每个周期内对各自的记忆状态产生可忽略不计的变化,但通过分析SCPCM得出的结论具有一般有效性,无论刺激的性质如何。通过一系列案例研究,强调了周期性驱动ReRAM细胞的新分析方法比经典TA-SDR工具的优势,其中一些案例研究揭示了ReRAM细胞在通过每个周期适当数量的SET和RESET脉冲序列进行周期性刺激时显示多种振荡工作模式的有趣能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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