Analysis and Design of CNTFET-Based Electronic Circuits: A Review

IF 0.9 Q4 NANOSCIENCE & NANOTECHNOLOGY

International Journal of Nanoscience Pub Date : 2023-11-03 DOI:10.1142/s0219581x23300079

R. Marani, A. G. Perri

引用次数: 0

Abstract

In this review we present some design of CNTFET-based circuits, already proposed by us and here critically examined. For some of these, we compare the performance of proposed circuits both in CNTFET and CMOS technology. For CNTFET model, we use a compact, semi-empirical model, already proposed by us and briefly recalled, while, for the MOSFET model, we use the BSIM4 one of ADS library. Moreover in some design examples we compare our results with those obtained using the Stanford model. All simulations are carried out using the software ADS, which is compatible with the Verilog-A programming language.

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基于cntfet的电子电路分析与设计综述

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来源期刊

International Journal of Nanoscience NANOSCIENCE & NANOTECHNOLOGY-

CiteScore

1.60

自引率

12.50%

发文量

期刊介绍： This inter-disciplinary, internationally-reviewed research journal covers all aspects of nanometer scale science and technology. Articles in any contemporary topical areas are sought, from basic science of nanoscale physics and chemistry to applications in nanodevices, quantum engineering and quantum computing. IJN will include articles in the following research areas (and other related areas): · Properties Effected by Nanoscale Dimensions · Atomic Manipulation, Coupling of Properties at the Nanoscale · Controlled Synthesis, Fabrication and Processing at the Nanoscale · Nanoscale Precursors and Assembly, Nanostructure Arrays, Fullerenes, Carbon Nanotubes and Organic Nanostructures · Quantum Dots, Quantum Wires, Quantum Wells, Superlattices