Lead-free Perovskites TlGeClxBr3-x (x=0,1,2,3) as Promising Materials for Solar Cell Application: a DFT Study

IF 4.6 Q1 OPTICS
R K Pingak, A Z Johannes, N U J Hauwali, U A Deta
{"title":"Lead-free Perovskites TlGeCl<sub>x</sub>Br<sub>3-x</sub> (x=0,1,2,3) as Promising Materials for Solar Cell Application: a DFT Study","authors":"R K Pingak, A Z Johannes, N U J Hauwali, U A Deta","doi":"10.1088/1742-6596/2623/1/012002","DOIUrl":null,"url":null,"abstract":"Abstract This study investigates the structural parameters and the electronic properties of cubic TlGeCl x Br 3-x (x=0,1,2,3) lead-free perovskites to evaluate their potential as absorbers in perovskite solar cell devices. Density Functional Theory (DFT) embedded in the Quantum Espresso code was used to calculate these properties. The results revealed that the compounds have optimized lattice constants of 5.244 Å, 5.336 Å, 5.416 Å, and 5.501 Å, for TlGeCl 3 , TlGeCl 2 Br, TlGeClBr 2 , and TlGeBr 3 perovskites, respectively. In addition, the compounds are direct band gap (R → R) semiconductors with energy gap values of 0.847 eV, 0.683 eV, 0.556 eV, and 0.518 eV for the respective materials. It is important to note that the band gap of the perovskites reduces as a Cl − ion, two and three Cl − ions are replaced by a Br − ion, two and three Br − ions, respectively. The analysis of their projected density of states indicated that near the valence band maximum of the perovskites, Cl-3p and Br-4p states contributes the most to their total DOS. In contrast, the Ge-4p orbital is the most dominant state close to the conduction band minimum. Based on these energy gap values, the studied materials are promising candidates for lead-free perovskite solar cell devices, with TlGeBr 3 projected to be more promising than the other three materials.","PeriodicalId":44008,"journal":{"name":"Journal of Physics-Photonics","volume":"30 5","pages":"0"},"PeriodicalIF":4.6000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics-Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1742-6596/2623/1/012002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
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Abstract

Abstract This study investigates the structural parameters and the electronic properties of cubic TlGeCl x Br 3-x (x=0,1,2,3) lead-free perovskites to evaluate their potential as absorbers in perovskite solar cell devices. Density Functional Theory (DFT) embedded in the Quantum Espresso code was used to calculate these properties. The results revealed that the compounds have optimized lattice constants of 5.244 Å, 5.336 Å, 5.416 Å, and 5.501 Å, for TlGeCl 3 , TlGeCl 2 Br, TlGeClBr 2 , and TlGeBr 3 perovskites, respectively. In addition, the compounds are direct band gap (R → R) semiconductors with energy gap values of 0.847 eV, 0.683 eV, 0.556 eV, and 0.518 eV for the respective materials. It is important to note that the band gap of the perovskites reduces as a Cl − ion, two and three Cl − ions are replaced by a Br − ion, two and three Br − ions, respectively. The analysis of their projected density of states indicated that near the valence band maximum of the perovskites, Cl-3p and Br-4p states contributes the most to their total DOS. In contrast, the Ge-4p orbital is the most dominant state close to the conduction band minimum. Based on these energy gap values, the studied materials are promising candidates for lead-free perovskite solar cell devices, with TlGeBr 3 projected to be more promising than the other three materials.
无铅钙钛矿TlGeClxBr3-x (x=0,1,2,3)作为太阳能电池材料的DFT研究
摘要本研究研究了立方TlGeCl x br3 -x (x=0,1,2,3)无铅钙钛矿的结构参数和电子性能,以评估其作为钙钛矿太阳能电池器件吸收剂的潜力。利用嵌入在Quantum Espresso代码中的密度泛函理论(DFT)来计算这些性质。结果表明,该化合物对tlgecl3、tlgecl2br、tlgeclbr2和tlgebr3钙钛矿的最佳晶格常数分别为5.244 Å、5.336 Å、5.416 Å和5.501 Å。此外,化合物是直接带隙(R→R)半导体,各自材料的能带值分别为0.847 eV, 0.683 eV, 0.556 eV和0.518 eV。值得注意的是,钙钛矿的带隙随着一个Cl -离子、两个和三个Cl -离子分别被一个Br -离子、两个和三个Br -离子取代而减小。钙钛矿的投影态密度分析表明,在价带最大值附近,Cl-3p和Br-4p态对总DOS的贡献最大。相反,Ge-4p轨道是最主要的状态,接近导带最小值。基于这些能隙值,所研究的材料是无铅钙钛矿太阳能电池器件的有希望的候选材料,其中tlgebr3预计比其他三种材料更有前途。
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来源期刊
CiteScore
10.70
自引率
0.00%
发文量
27
审稿时长
12 weeks
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