Impacts of Cavity Thickness and Insulating Material on Dielectric Modulated Trench Junction-less Double Gate Field Effect Transistor for Biosensing Applications
{"title":"Impacts of Cavity Thickness and Insulating Material on Dielectric Modulated Trench Junction-less Double Gate Field Effect Transistor for Biosensing Applications","authors":"Swagata Bhattacherjee, Palasri Dhar, Sunipa Roy","doi":"10.2174/0126661454274311231011070702","DOIUrl":null,"url":null,"abstract":"Introduction: This work represents the influence of gate dielectric, and the nano-cavity gap of a dielectric modulated trench gate Junction-less Double Gate Field Effect Transistor (JL-DGFET) on the different performance indicators is investigated considering the Low-Frequency Noise. Methods:: It is noted that the gate dielectric and the nanogap, both parameters, have a substantial influence on the sensing capacity and performance of noise of the device. Results:: A double gate suitable dielectric material and cavity thickness can effectively improve the biosensor’s sensitivity with a minimum amount of noise. Conclusion:: The sensitivity is found to increase up to 9.5 for dielectric constant, k = 3.57 and 6.5 for dielectric constant, k = 2.1.","PeriodicalId":36699,"journal":{"name":"Current Materials Science","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/0126661454274311231011070702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Introduction: This work represents the influence of gate dielectric, and the nano-cavity gap of a dielectric modulated trench gate Junction-less Double Gate Field Effect Transistor (JL-DGFET) on the different performance indicators is investigated considering the Low-Frequency Noise. Methods:: It is noted that the gate dielectric and the nanogap, both parameters, have a substantial influence on the sensing capacity and performance of noise of the device. Results:: A double gate suitable dielectric material and cavity thickness can effectively improve the biosensor’s sensitivity with a minimum amount of noise. Conclusion:: The sensitivity is found to increase up to 9.5 for dielectric constant, k = 3.57 and 6.5 for dielectric constant, k = 2.1.