Numerical simulation of SiC crystal growth during physical vapor transport using the lattice Boltzmann - phase field model

Q3 Engineering

International Journal of Computational Materials Science and Surface Engineering Pub Date : 2023-01-01 DOI:10.1504/ijcmsse.2023.10059324

Hui Xing, Shilin Mao, Hu Zhao, Dongke Sun

引用次数: 0

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用晶格玻尔兹曼-相场模型数值模拟物理气运过程中SiC晶体生长

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Computational Materials Science and Surface Engineering Engineering-Engineering (all)

CiteScore

1.20

自引率

0.00%

发文量

期刊介绍： IJCMSSE is a refereed international journal that aims to provide a blend of theoretical and applied study of computational materials science and surface engineering. The scope of IJCMSSE original scientific papers that describe computer methods of modelling, simulation, and prediction for designing materials and structures at all length scales. The Editors-in-Chief of IJCMSSE encourage the submission of fundamental and interdisciplinary contributions on materials science and engineering, surface engineering and computational methods of modelling, simulation, and prediction. Papers published in IJCMSSE involve the solution of current problems, in which it is necessary to apply computational materials science and surface engineering methods for solving relevant engineering problems.