{"title":"Tunable polarization-drived high energy storage performances in flexible PbZrO <sub>3</sub> films by growing Al <sub>2</sub>O <sub>3</sub> nanolayers","authors":"Chao Yin, Tiandong Zhang, Zhuangzhuang Shi, Bowen Zhang, Changhai Zhang, Qingguo Chi","doi":"10.26599/jac.2023.9220814","DOIUrl":null,"url":null,"abstract":"In recent years, PbZrO<sub>3</sub> (PZO) films have become a favorable electric storage material due to the unique electric field-induced phase transition behavior, but the severe hysteresis effect leads to the low energy storage density and efficiency. In this work, inserting Al<sub>2</sub>O<sub>3 </sub>(AO) insulation nanolayers is proposed to tune the polarization behavior of flexible PZO films, anticipating the optimization of energy storage performances. The results show that the thickness of the AO nanolayers has a deep influence on the polarization behavior of PZO films, PZO/AO/PZO (PAP) sandwiched films with 8 nm-AO interlayer deliver relaxor ferroelectric-like polarization instead of antiferroelectric counterpart. To further utilize AO nanolayers as top/bottom layers, a linear-like polarization and highest breakdown strength are achieved in the AO/PZO/AO/PZO/AO (APAPA8) multilayer films, leading to both high discharged energy storage density of 35.2 J/cm<sup>3</sup> and efficiency of 92.9%, as well as excellent fatigue and bending endurance, good temperature and frequency stability. The tunable polarization induced by growing AO nanolayers makes antiferroelectric PZO films have great potential to be used as the energy storage dielectrics.","PeriodicalId":14862,"journal":{"name":"Journal of Advanced Ceramics","volume":"133 1","pages":"0"},"PeriodicalIF":18.6000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Advanced Ceramics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.26599/jac.2023.9220814","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
引用次数: 0
Abstract
In recent years, PbZrO3 (PZO) films have become a favorable electric storage material due to the unique electric field-induced phase transition behavior, but the severe hysteresis effect leads to the low energy storage density and efficiency. In this work, inserting Al2O3 (AO) insulation nanolayers is proposed to tune the polarization behavior of flexible PZO films, anticipating the optimization of energy storage performances. The results show that the thickness of the AO nanolayers has a deep influence on the polarization behavior of PZO films, PZO/AO/PZO (PAP) sandwiched films with 8 nm-AO interlayer deliver relaxor ferroelectric-like polarization instead of antiferroelectric counterpart. To further utilize AO nanolayers as top/bottom layers, a linear-like polarization and highest breakdown strength are achieved in the AO/PZO/AO/PZO/AO (APAPA8) multilayer films, leading to both high discharged energy storage density of 35.2 J/cm3 and efficiency of 92.9%, as well as excellent fatigue and bending endurance, good temperature and frequency stability. The tunable polarization induced by growing AO nanolayers makes antiferroelectric PZO films have great potential to be used as the energy storage dielectrics.
期刊介绍:
Journal of Advanced Ceramics is a single-blind peer-reviewed, open access international journal published on behalf of the State Key Laboratory of New Ceramics and Fine Processing (Tsinghua University, China) and the Advanced Ceramics Division of the Chinese Ceramic Society.
Journal of Advanced Ceramics provides a forum for publishing original research papers, rapid communications, and commissioned reviews relating to advanced ceramic materials in the forms of particulates, dense or porous bodies, thin/thick films or coatings and laminated, graded and composite structures.