Solution‐Based Fabrication of Copper Oxide Thin Film Influence of Transition Metal (Cobalt) Doping on Structural, Morphological, Electrical, and Optical Properties

Samed ÇETİNKAYA
{"title":"Solution‐Based Fabrication of Copper Oxide Thin Film Influence of Transition Metal (Cobalt) Doping on Structural, Morphological, Electrical, and Optical Properties","authors":"Samed ÇETİNKAYA","doi":"10.31127/tuje.1290655","DOIUrl":null,"url":null,"abstract":"In this study, Cobalt (Co) doped Copper Oxide (CuO) films at different concentrations were deposited on glass substrates, using the Chemical Bath Deposition method. The films were characterized by Field Emission Scanning Electron Microscopy (FESEM), X-Ray Diffraction XRD), Ultra Violet-Visible Spectroscopy (UV-Vis.) and two-point contact method. The SEM showed that nanoplates formed increased in size and voids on the films surface decreased with increasing Co concentration. The XRD patterns revealed an increase in crystallite size with increasing (from 14.40 to 18.60 nm) Co concentration and no secondary phase was formed. The EDS spectra showed the presence of Co in the film composition with increasing concentration. The results of UV-Vis. spectroscopy showed that transmittance and band gap values could be changed with Co doping and thus the CuO band gap could be adjusted with the Co doping. The temperature-dependent current-voltage measurement results obtained with the two-point contact method showed that activation energy levels increased (from 0.134 to 0.232 eV) with increasing Co concentration. It was also observed that the conductivity increased with increasing temperature.","PeriodicalId":23377,"journal":{"name":"Turkish Journal of Engineering and Environmental Sciences","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Turkish Journal of Engineering and Environmental Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31127/tuje.1290655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this study, Cobalt (Co) doped Copper Oxide (CuO) films at different concentrations were deposited on glass substrates, using the Chemical Bath Deposition method. The films were characterized by Field Emission Scanning Electron Microscopy (FESEM), X-Ray Diffraction XRD), Ultra Violet-Visible Spectroscopy (UV-Vis.) and two-point contact method. The SEM showed that nanoplates formed increased in size and voids on the films surface decreased with increasing Co concentration. The XRD patterns revealed an increase in crystallite size with increasing (from 14.40 to 18.60 nm) Co concentration and no secondary phase was formed. The EDS spectra showed the presence of Co in the film composition with increasing concentration. The results of UV-Vis. spectroscopy showed that transmittance and band gap values could be changed with Co doping and thus the CuO band gap could be adjusted with the Co doping. The temperature-dependent current-voltage measurement results obtained with the two-point contact method showed that activation energy levels increased (from 0.134 to 0.232 eV) with increasing Co concentration. It was also observed that the conductivity increased with increasing temperature.
过渡金属(钴)掺杂对结构、形态、电学和光学性能的影响
在本研究中,采用化学浴沉积法在玻璃衬底上沉积了不同浓度的钴(Co)掺杂氧化铜(CuO)薄膜。采用场发射扫描电镜(FESEM)、x射线衍射(XRD)、紫外可见光谱(UV-Vis)和两点接触法对薄膜进行了表征。SEM结果表明,随着Co浓度的增加,形成的纳米片尺寸增大,膜表面空隙减小。XRD谱图显示,随着Co浓度的增加(从14.40 nm增加到18.60 nm),晶粒尺寸逐渐增大,未形成二次相。能谱分析表明,随着浓度的增加,薄膜成分中存在Co。紫外-可见的结果。光谱分析结果表明,Co掺杂可以改变CuO的透射率和带隙值,从而可以调节CuO的带隙。用两点接触法测得的温度相关的电流电压结果表明,随着Co浓度的增加,活化能从0.134 eV增加到0.232 eV。电导率随温度的升高而升高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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