Solution‐Based Fabrication of Copper Oxide Thin Film Influence of Transition Metal (Cobalt) Doping on Structural, Morphological, Electrical, and Optical Properties

Abstract

In this study, Cobalt (Co) doped Copper Oxide (CuO) films at different concentrations were deposited on glass substrates, using the Chemical Bath Deposition method. The films were characterized by Field Emission Scanning Electron Microscopy (FESEM), X-Ray Diffraction XRD), Ultra Violet-Visible Spectroscopy (UV-Vis.) and two-point contact method. The SEM showed that nanoplates formed increased in size and voids on the films surface decreased with increasing Co concentration. The XRD patterns revealed an increase in crystallite size with increasing (from 14.40 to 18.60 nm) Co concentration and no secondary phase was formed. The EDS spectra showed the presence of Co in the film composition with increasing concentration. The results of UV-Vis. spectroscopy showed that transmittance and band gap values could be changed with Co doping and thus the CuO band gap could be adjusted with the Co doping. The temperature-dependent current-voltage measurement results obtained with the two-point contact method showed that activation energy levels increased (from 0.134 to 0.232 eV) with increasing Co concentration. It was also observed that the conductivity increased with increasing temperature.