A fully integrated wideband GaN Doherty power amplifier MMIC with high efficiency for 5G massive MIMO application

IF 0.8 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Ieice Electronics Express Pub Date : 2023-01-01 DOI:10.1587/elex.20.20230456

Yanchen Guo, Lin Yang, Jia Liu, Tongtong Cao, Chengyu Yan, Jing Zhang, Ruihong Wu, Jing Zhang

引用次数: 0

Abstract

In this paper, a 4.5-5.5 GHz wideband high efficiency Doherty power amplifier (DPA) MMIC using a novel compensation technique is proposed. The phase difference and output capacitances of the carrier and peaking PA are analyzed and compensated accurately in a wideband. Thus a sufficient load modulation of the DPA is obtained in a broadband. To verify the proposed design methodology, a broadband high-efficiency DPA MMIC is designed and fabricated in a 0.25 µm GaN-HEMT process for 5G massive MIMO applications. The measurement results illustrate that power added efficiency (PAE) is 44.8%-52.2% at the saturated output power (Psat) of 39.8-40.8 dBm, the PAE at 6-dB output back-off (OBO) is 40.9%-43.9%, and the small-signal gain is 12.5-13.9dB. The proposed DPA demonstrates state-of-the-art saturated and 6-dB back-off PAE among published C-band broadband GaN MMIC DPAs.

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面向5G大规模MIMO应用的全集成宽带GaN Doherty功率放大器

本文提出了一种采用新型补偿技术的4.5-5.5 GHz宽带高效Doherty功率放大器(DPA) MMIC。对载波和峰值放大器的相位差和输出电容进行了分析，并在宽带范围内进行了精确的补偿。因此，在宽带中获得了DPA的充分负载调制。为了验证所提出的设计方法，在0.25µm GaN-HEMT工艺中设计和制造了宽带高效DPA MMIC，用于5G大规模MIMO应用。测量结果表明，在饱和输出功率(Psat)为39.8 ~ 40.8 dBm时，功率附加效率(PAE)为44.8% ~ 52.2%，在6 db输出回退(OBO)时，PAE为40.9% ~ 43.9%，小信号增益为12.5 ~ 13.9 db。所提出的DPA在已发布的c波段宽带GaN MMIC DPA中展示了最先进的饱和和6db回退PAE。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Ieice Electronics Express 工程技术-工程：电子与电气

CiteScore

1.50

自引率

37.50%

发文量

119

审稿时长

1.1 months

期刊介绍： An aim of ELEX is rapid publication of original, peer-reviewed short papers that treat the field of modern electronics and electrical engineering. The boundaries of acceptable fields are not strictly delimited and they are flexibly varied to reflect trends of the fields. The scope of ELEX has mainly been focused on device and circuit technologies. Current appropriate topics include: - Integrated optoelectronics (lasers and optoelectronic devices, silicon photonics, planar lightwave circuits, polymer optical circuits, etc.) - Optical hardware (fiber optics, microwave photonics, optical interconnects, photonic signal processing, photonic integration and modules, optical sensing, etc.) - Electromagnetic theory - Microwave and millimeter-wave devices, circuits, and modules - THz devices, circuits and modules - Electron devices, circuits and modules (silicon, compound semiconductor, organic and novel materials) - Integrated circuits (memory, logic, analog, RF, sensor) - Power devices and circuits - Micro- or nano-electromechanical systems - Circuits and modules for storage - Superconducting electronics - Energy harvesting devices, circuits and modules - Circuits and modules for electronic displays - Circuits and modules for electronic instrumentation - Devices, circuits and modules for IoT and biomedical applications