Dynamic migration of <100> interstitial dislocation loops under pure W and W containing helium impurity (010) surfaces studied by molecular dynamics simulation

None Qin Meng-fei, None Wang Ying-Min, None Zhang Hong-Yu, None Sun Ji-Zhong
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Abstract

In the fusion irradiation environment, dislocation loop defects occur under the plasma-facing tungsten surfaces, which affect its mechanical properties and hydrogen/helium retention. This paper presents a study that dynamic behaviors of a Abstract Image loop with a radius of 1 nm under the WAbstract Image surface are simulated by using molecular dynamics simulation at the atomic level. It finds that the dislocation loop direction, bulk temperature, depth, and helium atoms have great influence on the motion of the dislocation. This study shows that the Abstract Image dislocation loop (Abstract Image is the Burgers vector, Abstract Image is the surface normal direction) tends to move towards the surface and the Abstract Image dislocation loop tends to stay in the material. In the course of its migration, the habit plane of dislocation loop may change and the internal stress reduces gradually. The probability of a Abstract Image dislocation loops escaping from the surface is over 90% when the temperature is higher than 800 K and their initial depth is less than 5 nm. The Abstract Image dislocation loop can escape from the surface when the temperature is 800 K and the initial depth is less than 2 nm. It is found that Abstract Image dislocation loops decompose into Abstract Image dislocations at elevated temperatures. Helium atoms impedes the migration of dislocation loop and increases its retention time. The existence of dislocation loops results in the uneven distribution of helium atoms under the W surface, and will potentially affect the surface morphology of tungsten.
动态偏移<100>通过分子动力学模拟研究了纯W和含氦杂质W(010)表面的间隙位错环
在聚变辐照环境下,面向等离子体的钨表面会出现位错环缺陷,影响其力学性能和氢/氦潴留。本文研究了<img border=0 >W<img border=0 src="20230651_O_editing.files/image103.png">用分子动力学方法在原子水平上对表面进行了模拟。发现位错环的方向、体温、深度和氦原子对位错的运动有较大影响。本研究显示<img border=0 src="20230651_O_editing.files/image104.png">错位循环(<img border=0 src="20230651_O_editing.files/image105.png">为汉堡矢量,<img border=0 src="20230651_O_editing.files/image106.png">(为表面法线方向)趋向于向表面移动<img边界=0 >位错环倾向于留在材料中。在其迁移过程中,位错环的习惯面可能发生改变,内应力逐渐减小。<img border=0 src="20230651_O_editing.files/image104.png">当温度高于800 K且初始深度小于5 nm时,位错环从表面逸出的比例超过90%。img border=0 >当温度为800 K,初始深度小于2 nm时,位错环可以从表面逸出。发现<img border=0 src="20230651_O_editing.files/image108.png">错位循环分解为<img border=0 src="20230651_O_editing.files/image109.png">高温下的位错。氦原子阻碍了位错环的迁移,延长了位错环的保留时间。位错环的存在导致钨表面下氦原子分布不均匀,对钨的表面形貌有潜在影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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