A switch from ferro- to antiferromagnetic ordering in the solid solutions CeAuGe1−x Sn x

Maximilian Kai Reimann, Wilma Pröbsting, Aylin Koldemir, Jana Palms, Rainer Pöttgen
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Abstract

Abstract CeAuGe and CeAuSn (both NdPtSb type, space group P 6 3 mc ) form a complete solid solution CeAuGe 1− x Sn x with Vegard-type behavior of the cell volume. Samples with steps of x = 0.1 were synthesized from the pure elements by arc-melting. The structure of CeAuGe 0.13(2) Sn 0.87(2) was refined from single-crystal X-ray diffractometer data: a = 469.10(6), c = 773.90(10) pm, wR 2 = 0.0359, 251 F 2 values and 12 variables. The induced structural disorder caused by the Ge/Sn mixing affects the magnetic ground state of the cerium ions. From the germanium-rich side, the Curie temperature of CeAuGe (10.0 K) decreases towards CeAuGe 0.6 Sn 0.4 , while the Néel temperature of CeAuSn (4.4 K) decreases at the tin-rich side toward CeAuGe 0.4 Sn 0.6 . The switch of the magnetic ground state occurs approximately around the Ge/Sn ratio of 1:1. 119 Sn Mössbauer spectra of CeAuGe 0.1 Sn 0.9 and CeAuGe 0.7 Sn 0.3 confirm the presence of single crystallographic tin sites in both cases, and the isomer shifts are comparable to that of pure CeAuSn, indicating similar electron density distribution at the tin nuclei.
固溶体CeAuGe1−x Sn x中铁磁有序到反铁磁有序的转换
CeAuGe和CeAuSn(均为NdPtSb型,空间群P 6 3 mc)形成完整的固溶体CeAuGe 1−x Sn x,胞体体积呈维加德型行为。采用电弧熔炼法制备了步长为x = 0.1的纯元素样品。根据单晶x射线衍射数据,对CeAuGe 0.13(2) Sn 0.87(2)的结构进行了细化:a = 469.10(6), c = 773.90(10) pm, wr2 = 0.0359, f2值251,变量12。Ge/Sn混合引起的结构紊乱影响了铈离子的磁性基态。富锗侧CeAuGe (10.0 K)的居里温度向CeAuGe 0.6 Sn 0.4方向降低,富锡侧CeAuGe (4.4 K)的n温度向CeAuGe 0.4 Sn 0.6方向降低。磁性基态的切换大约发生在Ge/Sn比为1:1左右。CeAuGe 0.1 Sn 0.9和CeAuGe 0.7 Sn 0.3的Sn Mössbauer谱图证实了在这两种情况下单晶锡位的存在,并且同分异构体位移与纯CeAuSn相当,表明锡核处的电子密度分布相似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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