To Study the Cadmium Sulphide Thin Films Synthesis by Simple Spin Coating Method for Energy Application

IF 1 Q3 PHYSICS, MULTIDISCIPLINARY
Jagmohan Lal Sharma, S.K. Jain, Balram Tripathi, Mahesh Chandra Mishra
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引用次数: 0

Abstract

The paper examines the properties of CdS thin film, which is used for window material of solar cells and optical devices. The cadmium sulfide (CdS) thin film was prepared by sol-gel method on glass and ITO substrate. Prepared thin film dried in a vacuum oven at 70℃. Thin film and powder of CdS characterized for structural, optical, and electrical properties by X-ray Diffractometer (XRD), UV-Visible spectrometer, and Keithley spectrometer. The average crystallite sizes, microstrain, and dislocation density of the samples were calculated by the Debye Scherrer formula. The optical band gap of CdS calculated by the Tauc-plot method and obtained 2.40 and 2.41eV for powder and film. The absorption wavelength of CdS is suddenly decreased near 280nm and becomes flat in the higher wavelength region. The FTIR spectrometer is used to identification of unknown materials and bond formation. The bond formation, imperfections, and impurities were observed by the PL spectrometer. Keithley spectrometer is used for I-V characteristics and calculates electrical resistivity by Ohms law.
研究简单自旋镀膜法制备可用于能源应用的硫化镉薄膜
本文研究了用于太阳能电池和光学器件窗口材料的CdS薄膜的性能。采用溶胶-凝胶法在玻璃和ITO衬底上制备了硫化镉薄膜。制备好的薄膜在70℃真空烘箱中干燥。利用x射线衍射仪(XRD)、紫外-可见光谱仪和基思利光谱仪对CdS薄膜和粉末的结构、光学和电学性能进行了表征。采用Debye Scherrer公式计算了样品的平均晶粒尺寸、微应变和位错密度。用陶克图法计算CdS的光学带隙,得到粉末和薄膜的带隙分别为2.40和2.41eV。CdS的吸收波长在280nm附近突然减小,在较高波长区域趋于平缓。FTIR光谱仪用于鉴定未知物质和键形成。用PL谱仪观察了键形成、缺陷和杂质。采用基思利光谱仪测量I-V特性,并根据欧姆定律计算电阻率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
East European Journal of Physics
East European Journal of Physics PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.10
自引率
25.00%
发文量
58
审稿时长
8 weeks
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