A first-principles study of bilayer 1T'-WTe2/CrI3: A candidate topological spin filter

Staros, Daniel, Rubenstein, Brenda, Ganesh, Panchapakesan
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Abstract

The ability to manipulate electronic spin channels in 2D materials is crucial for realizing next-generation spintronics. Spin filters are spintronic components that polarize spins using external fields or material properties like magnetism. Recently, topological protection from backscattering has emerged as an enticing feature through which to enhance the robustness of 2D spin filters. In this work, we propose and then characterize one of the first 2D topological spin filters: bilayer CrI3/1T'-WTe2 (BLCW). To do so, we use a combination of DFT, maximally localized Wannier functions, and quantum transport simulations to demonstrate that the BLCW satisfies the principal criteria for being a topological spin filter; namely that it is gapless, exhibits spin-polarized charge transfer (SPCT) from WTe2 to CrI3 that renders the BLCW metallic, and has a topological boundary which retains the edge conductance of monolayer (ML) 1T'-WTe2. We observe that the atomic magnetic moments on Cr from DFT are approximately 3.2 mB/Cr in the BL compared to 2.9 mB/Cr with small negative ferromagnetic (FM) moments induced on the W atoms in freestanding ML CrI3. Subtracting the charge/spin densities of the constituent ML's from those of the BLCW further reveals SOC-enhanced SPCT from WTe2 to CrI3. We find that the BLCW is topologically trivial by showing that its Chern number is zero. Lastly, we show that interfacial scattering at the boundary between the terraced materials does not remove WTe2's edge conductance. This evidence indicates that BLCW is gapless, magnetic, and topologically trivial, meaning that a terraced WTe2/CrI3 BL heterostructure in which only a portion of a WTe2 ML is topped with CrI3 is a promising candidate for a 2D topological spin filter. Our results further suggest that 1D chiral edge states may be realized by stacking FM ML's, like CrI3, atop 2D nonmagnetic Weyl semimetals like 1T'-WTe2.
双分子层1T'-WTe2/CrI3的第一性原理研究:一种候选拓扑自旋滤波器
在二维材料中操纵电子自旋通道的能力对于实现下一代自旋电子学至关重要。自旋滤波器是一种自旋电子元件,它利用外场或磁性等材料特性来使自旋极化。最近,拓扑保护从后向散射已经成为一个诱人的特征,通过它来提高二维自旋滤波器的鲁棒性。在这项工作中,我们提出并表征了第一个二维拓扑自旋滤波器之一:双层CrI3/1T'-WTe2 (BLCW)。为此,我们使用DFT、最大局域万尼尔函数和量子输运模拟的组合来证明BLCW满足拓扑自旋滤波器的主要标准;即,它是无间隙的,从WTe2到CrI3表现出自旋极化电荷转移(SPCT),使BLCW具有金属性,并且具有保留单层(ML) 1T'-WTe2边缘电导的拓扑边界。我们观察到,在BL中,DFT对Cr的原子磁矩约为3.2 mB/Cr,而在独立的ML - CrI3中,W原子诱导的负铁磁矩为2.9 mB/Cr。从BLCW的电荷/自旋密度中减去组成ML的电荷/自旋密度,进一步揭示了soc增强的从WTe2到CrI3的SPCT。通过证明其陈氏数为零,我们发现BLCW是拓扑平凡的。最后,我们发现在阶梯状材料之间的界面散射并没有消除WTe2的边缘电导。这一证据表明,BLCW是无间隙的,磁性的,并且拓扑结构简单,这意味着一个阶梯状的WTe2/CrI3 BL异质结构,其中只有一部分WTe2 ML顶部有CrI3,是一个很有希望的二维拓扑自旋滤波器的候选材料。我们的研究结果进一步表明,可以通过将FM ML(如CrI3)叠加在2D非磁性Weyl半金属(如1T'-WTe2)上来实现1D手性边缘态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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