Investigation of optoelectronic properties of half-Heusler KZnN and KZnP compounds

IF 1.2 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
S. Azzi, F. Belkharroubi, N. Ramdani, I. S. Messaoud, W. Belkilali, L. Drici, L. Blaha, I. Ameri, Yarub Al-Douri, A. Bouhemadou
{"title":"Investigation of optoelectronic properties of half-Heusler KZnN and KZnP compounds","authors":"S. Azzi, F. Belkharroubi, N. Ramdani, I. S. Messaoud, W. Belkilali, L. Drici, L. Blaha, I. Ameri, Yarub Al-Douri, A. Bouhemadou","doi":"10.31349/revmexfis.69.060501","DOIUrl":null,"url":null,"abstract":"This is to investigate the structural, mechanical, electronic and optical properties of half-Heusler KZnN and KZnP compounds. The ab initio method based on density functional theory is employed. The study of structural properties has allowed us to verify the cubic structure type I that is the most stable among the three possible atomic arrangements for the two half-Heusler compounds. The mechanical stability is checked, since the calculated elastic constants obey the stability criteria of cubic. Our calculations have demonstrated that KZnN is a ductile material that is considerably stiffer than KZnP, which exhibits brittleness. The obtained results for the electronic properties with mBJ-GGA approximation reveal a semiconductor behavior with a band gap along Γ as estimated at 0.3 eV and 0.9 eV for KZnN and KZnP compounds, respectively. In addition, the optical properties have been studied by analyzing the variation of different parameters such as dielectric function, refractive index, reflectivity, absorption coefficient and conductance as a function of photon’s energy for a wide range; 0 - 40 eV. The origin of peaks in the optical spectra is determined in terms of calculated energy band structures. This work has predicted strong absorption in the ultraviolet field.","PeriodicalId":21538,"journal":{"name":"Revista Mexicana De Fisica","volume":"231 5","pages":"0"},"PeriodicalIF":1.2000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Revista Mexicana De Fisica","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31349/revmexfis.69.060501","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This is to investigate the structural, mechanical, electronic and optical properties of half-Heusler KZnN and KZnP compounds. The ab initio method based on density functional theory is employed. The study of structural properties has allowed us to verify the cubic structure type I that is the most stable among the three possible atomic arrangements for the two half-Heusler compounds. The mechanical stability is checked, since the calculated elastic constants obey the stability criteria of cubic. Our calculations have demonstrated that KZnN is a ductile material that is considerably stiffer than KZnP, which exhibits brittleness. The obtained results for the electronic properties with mBJ-GGA approximation reveal a semiconductor behavior with a band gap along Γ as estimated at 0.3 eV and 0.9 eV for KZnN and KZnP compounds, respectively. In addition, the optical properties have been studied by analyzing the variation of different parameters such as dielectric function, refractive index, reflectivity, absorption coefficient and conductance as a function of photon’s energy for a wide range; 0 - 40 eV. The origin of peaks in the optical spectra is determined in terms of calculated energy band structures. This work has predicted strong absorption in the ultraviolet field.
半heusler KZnN和KZnP化合物光电性质的研究
本文研究了半heusler KZnN和KZnP化合物的结构、力学、电子和光学性质。采用基于密度泛函理论的从头算方法。通过对结构性质的研究,我们确定了两种半赫斯勒化合物三种可能的原子排列中最稳定的立方结构类型I。由于计算得到的弹性常数符合立方稳定性判据,对其力学稳定性进行了校核。我们的计算表明,KZnN是一种延展性材料,它比KZnP要硬得多,而KZnP表现出脆性。利用mBJ-GGA近似得到的电子性质结果表明,KZnN和KZnP化合物分别在0.3 eV和0.9 eV处具有沿Γ带隙的半导体行为。此外,在较宽的范围内,通过分析介电函数、折射率、反射率、吸收系数和电导等参数随光子能量的变化规律,研究了其光学特性;0 - 40 eV。光谱中峰的起源是根据计算的能带结构来确定的。这项工作预测了紫外场的强吸收。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Revista Mexicana De Fisica
Revista Mexicana De Fisica 物理-物理:综合
CiteScore
2.20
自引率
11.80%
发文量
87
审稿时长
4-8 weeks
期刊介绍: Durante los últimos años, los responsables de la Revista Mexicana de Física, la Revista Mexicana de Física E y la Revista Mexicana de Física S, hemos realizado esfuerzos para fortalecer la presencia de estas publicaciones en nuestra página Web ( http://rmf.smf.mx).
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信