Correlation between Phase Evolution, Physical and Electrical Properties of (Bi 0.5 (Na 0.80 K 0.20 ) 0.5 ) 1-x (Ba 0.7 Sr 0.3 ) x TiO 3 Lead-Free Piezoelectric Ceramics
IF 0.7 4区 工程技术Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
{"title":"Correlation between Phase Evolution, Physical and Electrical Properties of (Bi <sub>0.5</sub> (Na <sub>0.80</sub> K <sub>0.20</sub> ) <sub>0.5</sub> ) <sub>1-</sub> <i> <sub>x</sub> </i> (Ba <sub>0.7</sub> Sr <sub>0.3</sub> ) <i> <sub>x</sub> </i> TiO <sub>3</sub> Lead-Free Piezoelectric Ceramics","authors":"Pimpilai Wannasut, Pharatree Jaita, Methee Promsawat, Orawan Khamman, Sireetone Yawirach, Anucha Watcharapasorn","doi":"10.1080/10584587.2023.2234589","DOIUrl":null,"url":null,"abstract":"AbstractThe (Bi0.5(Na0.80K0.20)0.5)1-x(Ba0.7Sr0.3)xTiO3 or (BiNK)1-x(BaS)xT (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05 and 0.06 mol fraction) lead-free piezoelectric ceramics were firstly made by a conventional one step mixed-oxide method and sintered at 1125 °C for 2 h with a heating rate of 5 °C/min. All samples showed optimum relative densities of ∼97–98%. The XRD result indicated that no impurity phase was detected in all fabricated samples. SEM images indicated that all ceramics possessed irregular shaped grains. It was also found that BST added content had an effect on electrical properties of BNKT ceramics. The highest piezoelectric coefficient (d33 = 164 pC/N) with good dielectric (εr = 1577, tanδ = 0.0855) and ferroelectric properties (Pr = 11.38 µC/cm2, Ec = 19.89 kV/cm) were obtained for (BiNK)0.98(BaS)0.02T sample.Keywords: Lead free piezoelectric ceramicsbismuth sodium potassium titanatedielectric behavior Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis research project is supported by TSRI and National Research Council of Thailand (NRCT):NRCT5-RSA63004-15. Partial supports from the Center of Excellence in Materials Science and Technology, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University are also acknowledged. P. Wannasut and P. Jaita would like to acknowledge funding from the Office of Research Administration, Chiang Mai University. M. Promsawat would like to thank Rubber Product and Innovation Development Research Unit (SCIRU63002).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"100 1","pages":"0"},"PeriodicalIF":0.7000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2234589","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
AbstractThe (Bi0.5(Na0.80K0.20)0.5)1-x(Ba0.7Sr0.3)xTiO3 or (BiNK)1-x(BaS)xT (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05 and 0.06 mol fraction) lead-free piezoelectric ceramics were firstly made by a conventional one step mixed-oxide method and sintered at 1125 °C for 2 h with a heating rate of 5 °C/min. All samples showed optimum relative densities of ∼97–98%. The XRD result indicated that no impurity phase was detected in all fabricated samples. SEM images indicated that all ceramics possessed irregular shaped grains. It was also found that BST added content had an effect on electrical properties of BNKT ceramics. The highest piezoelectric coefficient (d33 = 164 pC/N) with good dielectric (εr = 1577, tanδ = 0.0855) and ferroelectric properties (Pr = 11.38 µC/cm2, Ec = 19.89 kV/cm) were obtained for (BiNK)0.98(BaS)0.02T sample.Keywords: Lead free piezoelectric ceramicsbismuth sodium potassium titanatedielectric behavior Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis research project is supported by TSRI and National Research Council of Thailand (NRCT):NRCT5-RSA63004-15. Partial supports from the Center of Excellence in Materials Science and Technology, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University are also acknowledged. P. Wannasut and P. Jaita would like to acknowledge funding from the Office of Research Administration, Chiang Mai University. M. Promsawat would like to thank Rubber Product and Innovation Development Research Unit (SCIRU63002).
期刊介绍:
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.